Ag-Doped Semiconductor Layer for LED Light Extraction
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Solution Overview
Problem
Current LED technologies face challenges in enhancing light extraction efficiency, which limits their luminous performance and energy conservation potential.
Innovation Solution
The development of an optoelectronic device with a semiconductor layer containing Ag, where the atomic concentration of Ag is greater than 1*10^16 cm^-3, and a manufacturing method that includes specific layer structures and processes to optimize light emission and conductivity, such as forming a reflecting layer with Ag and enhancing surface roughness for improved light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional LED structures are used, then manufacturing is simple, but light extraction efficiency is low
Solution Approach 1:
The patent introduces a semiconductor layer with localized Ag element doping (atomic concentration >1×10^16 cm^-3) at specific positions within the LED structure. This local modification creates enhanced light extraction properties without redesigning the entire device, thereby improving light extraction efficiency while maintaining manufacturing simplicity.
Solution Approach 2:
The patent changes the chemical composition parameter by introducing Ag elements into the semiconductor layer with a specific atomic concentration range (>1×10^16 cm^-3). This parameter change modifies the optical properties of the semiconductor material, enabling improved light extraction efficiency without fundamentally altering the manufacturing process.
2Loss of energy
If Ag concentration is increased to improve light extraction, then light extraction efficiency increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent performs preliminary doping of Ag elements into the semiconductor layer during the epitaxial growth process, before final device assembly. By pre-establishing the Ag concentration distribution (>1×10^16 cm^-3) in the semiconductor layer, the patent simplifies subsequent manufacturing steps and reduces the precision requirements for later processing operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly increases light extraction efficiency, achieving optical efficiencies of at least 70 lumen/watt with improved current spreading and reflectivity, enhancing the device's luminous performance and energy efficiency.
Implementation Method 1
increase the light extraction efficiency (LEE) that emphasizes on the increase of light which is emitted by the light-emitting layer capable of escaping outside the device
Implementation Method 2
forming a reflecting layer with Ag and enhancing surface roughness for improved light extraction
Data Source
AI summary
An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*1016 cm−3.