Ag-Ge-S Semiconductor Nanoparticles for Safe Near-Infrared Emission

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Solution Overview

Problem

Existing semiconductor nanoparticles containing toxic elements like Cd, Se, and In pose environmental and health risks, limiting their application in consumer and medical fields due to strict toxic control and health management requirements.

Innovation Solution

Development of semiconductor nanoparticles made from a compound semiconductor primarily consisting of Ag, Ge, and S, with a molar ratio of Ag to Ge between 1.0 and 7.5, and an average particle size of 9 nm or less, which are safer and easier to handle, and can emit light in the near-infrared region, utilizing a core-shell structure with a coating layer to improve emission properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If semiconductor nanoparticles containing toxic elements (Cd, Se, In) are used to achieve light emission properties, then emission performance is improved, but toxic control and health management requirements increase

Engineering Contradiction:
Improvelight emission propertiesVSAvoidtoxic control requirements
Core Design Contradiction:
Illumination intensityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the compositional parameters of the semiconductor nanoparticles by replacing toxic elements (Cd, Se, In) with non-toxic alternative elements (Ag, Ge, S) in specific molar ratios. This parameter substitution maintains the light emission functionality while eliminating toxicity, directly resolving the contradiction between emission performance and harmful factors

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent converts the harmful effect of toxic elements into a benefit by using the replacement elements (Ag, Ge, S) that not only eliminate toxicity but also provide improved light emission properties in the near-infrared region. The non-toxic composition becomes advantageous for biomedical applications where safety is critical

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Illumination intensity

If particle size is reduced to 10 nm or less to exhibit quantum size effect, then light emission wavelength control is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveemission wavelength controlVSAvoidparticle size control
Core Design Contradiction:
Illumination intensityVSManufacturing precision

Solution Approach 1:

The patent optimizes multiple parameters simultaneously: the molar ratio of Ag to Ge (1.0 to 7.5), the average particle size (9 nm or less), and the composition ratios. These parameter combinations work together to achieve both precise wavelength control through quantum size effect and manageable manufacturing precision by establishing specific compositional windows that facilitate controlled synthesis

Inventive Principle:
Principle #35Parameter changes

3Illumination intensity

If core-shell structure with coating layer is added to improve emission properties, then emission quantum yield is improved, but device complexity increases

Engineering Contradiction:
Improveemission quantum yieldVSAvoidstructure complexity
Core Design Contradiction:
Illumination intensityVSDevice complexity

Solution Approach 1:

The patent employs a core-shell composite structure where the core consists of Ag-Ge-S semiconductor nanoparticles and the shell comprises a coating layer. This composite structure improves emission quantum yield by protecting the core and enhancing optical properties, while the simplicity of the two-layer design minimizes the increase in device complexity

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The Ag-Ge-S nanoparticles require no strict toxic control, are highly safe, and exhibit improved emission properties, enabling their use in various fields such as bioimaging without harming living tissues and with high light transmittance in the near-infrared range.

Implementation Method 1

atomizing the nanoparticles to a size of 10 nm or less to allow for exhibition of quantum size effect

Methodology Applied
Scientific EffectQuantum size effect:

Implementation Method 2

a coating is formed on a surface of each nanoparticle to deactivate the surface, achieving an emission quantum yield of 10% or more

Methodology Applied
Scientific EffectSurface passivation:

Implementation Method 3

the peak wavelength of the emission intensity is in the range of 700 nm to 1400 nm and the half width of the peak wavelength is 100 nm or less

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS20240400895A1Semiconductor nanoparticles, method for producing semiconductor nanoparticles, and light emitter
Publication Date: 2024.12.05 MURATA MFG CO LTD
  • US20240400895A1 patent drawing
  • US20240400895A1 patent drawing
  • US20240400895A1 patent drawing

AI summary

Semiconductor nanoparticles that include a compound semiconductor mainly containing a Ag component, a Ge component, and a S component, wherein a content ratio of the Ag component to the Ge component is 1.0 or more and less than 7.5, in terms of molar ratio, and an average particle size of the semiconductor nanoparticles is 9 nm or less