Ag Paste Composition for Semiconductor Bonding
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Solution Overview
Problem
Current bonding methods for semiconductor chips, such as soldering and reflow methods, face challenges with reliability at high temperatures, void generation, and complex processes, while silver sintering methods are difficult to apply uniformly and require expensive equipment.
Innovation Solution
An Ag paste composition with 90-99 wt% Ag powder and 1-10 wt% organic binder, featuring an intermediate grain shape and controlled specific surface area, is used to form a sintered bonding layer between a semiconductor chip and a substrate through pressure-sintering at 200-300°C, improving bonding density and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If soldering bonding is used to bond semiconductor chip to substrate, then processability is improved, but reliability is reduced when exposed to high temperature
Solution Approach 1:
The invention changes the material composition parameters by using Ag powder with specific grain shape (intermediate between spherical nanoparticle and flake) and controlled specific surface area (1.3-1.8 m2/g), along with organic binder containing carboxylic acid or hydroxyl groups, to achieve low-temperature sintering bonding that maintains reliability at high temperatures while preserving processability
Solution Approach 2:
The invention uses a composite paste composition combining Ag powder with specific grain shape and organic binder (containing carboxylic acid or hydroxyl groups) to create a sintered bonding layer that exhibits both ease of manufacture and high-temperature reliability, resolving the contradiction between processability and reliability
2Reliability
If reflow method is used to bond semiconductor chip to substrate, then bonding reliability is improved, but voids are generated in solder depending on conditions
Solution Approach 1:
The invention changes the bonding process parameters by using low-temperature sintering (200-300°C) instead of high-temperature reflow, combined with Ag powder of specific grain shape and surface area, to achieve reliable bonding without void generation
Solution Approach 2:
The invention applies local quality control by optimizing the Ag powder grain shape (intermediate between spherical and flake) and surface area (1.3-1.8 m2/g) to ensure uniform paste application and prevent void formation during bonding, while maintaining bonding reliability
3Reliability
If sintering method is used to bond semiconductor chip to substrate, then bonding reliability at high temperature is improved, but it is difficult to uniformly apply the silver sintering paste
Solution Approach 1:
The invention changes the Ag powder parameters (grain shape intermediate between spherical nanoparticle and flake, specific surface area 1.3-1.8 m2/g) to achieve optimal paste rheology that allows uniform application while maintaining high-temperature bonding reliability
Solution Approach 2:
The invention ensures homogeneity in the paste composition by carefully controlling the Ag powder grain shape distribution and surface area, combined with organic binder selection, to achieve uniform paste application and consistent sintered bonding layer quality
4Reliability
If sintering method is used to bond semiconductor chip to substrate, then bonding reliability is improved, but process time is long and expensive equipment is required
Solution Approach 1:
The invention changes the sintering temperature parameter to a lower range (200-300°C) by using Ag powder with specific grain shape and surface area, significantly reducing process time and eliminating the need for expensive high-temperature equipment while maintaining bonding reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Ag paste composition enhances bonding stiffness and reliability, reduces process defects, and increases heat conductivity, enabling efficient low-temperature sintering and minimizing pores, thus securing high bonding strength and efficiency.
Implementation Method 1
an Ag paste composition forming a sintered bonding layer between a first object and a second object by being coated on the first object and pressure-sintering the first object toward the second object
Data Source
AI summary
The present disclosure relates to an Ag paste composition and a bonding film produced using same, the Ag paste composition being coated on a first object, and the first object being pressure sintered toward a second object side, thereby forming a sintered bonding layer between the first object and the second object, wherein the Ag paste composition comprises 90˜99 wt % of Ag powder, and 1˜10 wt % of an organic binder. The present disclosure controls the specific surface area and grain shape of the Ag powder, even without applying a spherical nanoparticle powder, and thus has the advantages of lowering a bond temperature and increasing bond density, thereby enabling the improvement of bond strength and reliability.