AgInGaS Core-Shell Nanoparticles for High Quantum Yield

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Solution Overview

Problem

Current semiconductor nanoparticles lack durability and efficiency in band-edge emission, particularly in terms of internal quantum yield and resistance to environmental factors during production processes.

Innovation Solution

The method involves producing semiconductor nanoparticles with a core-shell structure, where the first semiconductor nanoparticles contain silver (Ag), indium (In), gallium (Ga), and sulfur (S), and a second semiconductor with Ga and S is disposed on the surface, followed by heat treatments with gallium sources and gallium halides to enhance durability and emission properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional semiconductor nanoparticles are used, then production is simpler, but durability and internal quantum yield are insufficient

Engineering Contradiction:
ImprovedurabilityVSAvoidproduction process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The production process is divided into multiple sequential heat treatment steps: first heat treatment to form the core semiconductor nanoparticles, second heat treatment to form the shell layer, and third heat treatment to optimize surface properties. This segmentation allows each step to be optimized independently, achieving high durability and internal quantum yield while maintaining manageable process complexity through systematic breakdown of the synthesis pathway.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The core semiconductor nanoparticles are pre-formed with specific composition (Ag, In, Ga, S) before the shell layer is deposited. This preliminary formation of the core structure with controlled size (7.5 nm or larger) and composition enables subsequent shell deposition to focus solely on protecting the core and enhancing emission properties, rather than forming the entire structure in one step.

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If conventional semiconductor nanoparticles are used, then manufacturing is easier, but internal quantum yield and band-edge emission purity are insufficient

Engineering Contradiction:
Improveinternal quantum yieldVSAvoidproduction ease
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The invention uses composite semiconductor structures with specific material combinations: the core contains Ag, In, Ga, and S, while the shell contains Ga and S. This composite material approach enables the core to provide quantum confinement effects for high internal quantum yield, while the shell protects the core and enhances band-edge emission purity. The multi-material composition achieves superior optical properties that single-material nanoparticles cannot provide.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

Different regions of the nanoparticle are assigned different compositions and functions: the core region (7.5 nm or larger) is optimized for quantum confinement and light emission, while the shell region is optimized for protection and surface passivation. This local differentiation of material properties enables the core to achieve high internal quantum yield through quantum size effects, while the shell maintains band-edge emission purity by passivating surface defects.

Inventive Principle:
Principle #3Local quality

3Reliability

If semiconductor nanoparticles are exposed to organic solvents during purification, then purification is necessary, but emission purity deteriorates

Engineering Contradiction:
Improveemission purity maintenanceVSAvoidpurification process requirement
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The shell layer is formed on the core nanoparticles before any purification steps involving organic solvents. This shell acts as a protective cushion that prevents direct contact between the core semiconductor material and organic solvents, thereby maintaining emission purity during necessary purification processes. The shell's protective function is established beforehand, preventing solvent-induced degradation of the core's optical properties.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

A thin shell layer of Ga-S semiconductor is deposited on the core nanoparticles, creating a flexible protective barrier. This thin film structure is sufficient to protect the core from organic solvent exposure during purification, while maintaining the overall nanoparticle size and quantum confinement effects. The shell thickness is optimized to provide protection without significantly increasing particle size or compromising optical properties.

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in semiconductor nanoparticles with improved durability and high internal quantum yield, maintaining band-edge emission purity even after purification and exposure to organic solvents, with an average particle size of 7.5 nm or larger and a full width at half maximum of 30 nm or smaller.

Implementation Method 1

performing a first heat treatment of a first mixture containing the first semiconductor nanoparticles, a gallium (Ga) source, and a sulfur (S) source to obtain a first heat-treated product

Methodology Applied
Scientific EffectHeat treatment: Heat Treatment

Implementation Method 2

Semiconductor particles having a particle size of, for example, 20 nm or smaller are known to exhibit a quantum size effect, and such nanoparticles are referred to as 'quantum dots' The 'quantum size effect' refers to a phenomenon in which a valence band and a conduction band that are each regarded as continuous in bulk particles become discrete when the particle size is on the nanoscale and the band-gap energy varies with the particle size

Methodology Applied
Scientific EffectQuantum size effect:

Implementation Method 3

Quantum dots are capable of absorbing light and converting the wavelength into a light corresponding to their band-gap energy

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS20240240079A1Semiconductor nanoparticles and method of producing thereof
Publication Date: 2024.07.18 NICHIA CORP
  • US20240240079A1 patent drawing
  • US20240240079A1 patent drawing
  • US20240240079A1 patent drawing

AI summary

A method of producing semiconductor nanoparticles includes: providing first semiconductor nanoparticles containing a first semiconductor containing Ag, In, Ga, and S, and a second semiconductor disposed on a surface of the first semiconductor and containing Ga and S; performing a first heat treatment of a first mixture containing the first semiconductor nanoparticles, a Ga source, and an S source to obtain a first heat-treated product comprising semiconductor composite particles; and performing a second heat treatment of a second mixture containing the semiconductor composite particles and a gallium halide to obtain a second heat-treated product.