AgSn Alloy Protection Layer for Electromigration Resistance

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Solution Overview

Problem

The increasing current densities through connection terminals in semiconductor devices lead to electromigration, causing resistance increases and potential wiring disconnections, which existing technologies fail to adequately prevent without increasing the size of the semiconductor device.

Innovation Solution

A protection layer made of a chemically stable AgSn alloy is applied to the surfaces of connection terminals, reducing the likelihood of electromigration by minimizing the diffusion of Cu and Ni atoms, and the use of an SnAg solder further suppresses wiring disconnections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the number of connection terminals is increased to improve performance and integration, then the electrical connection capability is improved, but the size of connection terminals must be reduced which leads to increased current density and electromigration

Engineering Contradiction:
Improveelectrical connection capabilityVSAvoidresistance stability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent changes the material composition parameter of the connection terminal surface by forming an AgSn alloy layer with specific composition (Ag: 70-95 wt%, Sn: 5-30 wt%). This material parameter change reduces electromigration effects and stabilizes resistance under high current density conditions, resolving the contradiction between increased connection capability and maintained reliability

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses a composite structure consisting of a base metal layer (Cu or Ni) combined with an AgSn alloy surface layer. This composite material structure leverages the high conductivity of Cu/Ni while utilizing the electromigration resistance of AgSn alloy, thereby maintaining both electrical performance and reliability under reduced terminal size conditions

Inventive Principle:
Principle #40Composite materials

2Volume of moving object

If the current density through connection terminals is increased to maintain terminal size, then the device size is kept small, but electromigration causes resistance increases and potential wiring disconnections

Engineering Contradiction:
Improveterminal sizeVSAvoidconnection stability
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent modifies the surface material parameters by creating an AgSn alloy layer with optimized composition ratios. This parameter change fundamentally alters the electromigration characteristics of the connection terminal, enabling it to withstand high current densities without resistance increase or wiring disconnection, thus maintaining connection stability in miniaturized terminals

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies a localized AgSn alloy layer only on the surface of the connection terminal where current flow and electromigration effects are most critical. This local quality enhancement protects the critical interface region while maintaining the overall terminal size, resolving the contradiction between miniaturization and connection reliability

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The AgSn protection layer effectively prevents electromigration, extending the lifespan of connections by three to six times compared to unprotected terminals, thereby enhancing the reliability of the junction between electronic components and circuit boards.

Implementation Method 1

The increasing current densities through connection terminals in semiconductor devices lead to electromigration, causing resistance increases and potential wiring disconnections

Methodology Applied
Scientific EffectElectromigration:

Implementation Method 2

reducing the likelihood of electromigration by minimizing the diffusion of Cu and Ni atoms

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 3

solder bonding a connection terminal of the electronic component to a connection terminal of the circuit board

Methodology Applied
Scientific EffectSoldering: Soldering

Data Source

PatentUS10062658B2Electronic component and electronic device
Publication Date: 2018.08.28 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10062658B2 patent drawing
  • US10062658B2 patent drawing
  • US10062658B2 patent drawing

AI summary

A surface of at least one of a connection terminal of an electronic component and a connection terminal of a circuit board is covered with a protection layer made of a AgSn alloy. The connection terminal of the electronic component is soldered to the connection terminal of the circuit board.