Air-Gap Bonding Pad Structure for Stress-Relieved Interconnects
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Solution Overview
Problem
The manufacturing and integration of semiconductor devices face complexity and deficiencies due to miniaturization, necessitating improvements in the manufacturing process to enhance performance, reliability, and yield.
Innovation Solution
Incorporating porous dielectric portions with air gaps between interconnect structures and bonding pads in semiconductor devices, which act as a cushion during bonding processes, reducing stress on the underlying structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If semiconductor devices are miniaturized to reduce size and cost, then device density and integration are improved, but manufacturing complexity and process deficiencies increase
Solution Approach 1:
The patent introduces porous dielectric materials in the interconnect structure, which provide stress relief through their compliant nature. The porous structure allows for controlled stress distribution during bonding processes, reducing manufacturing complexity associated with miniaturized devices while maintaining small device footprint.
Solution Approach 2:
The patent implements air gaps and compliant dielectric layers in advance before bonding operations. These pre-positioned cushioning elements absorb and distribute bonding stresses, preventing stress concentration in miniaturized devices and reducing process complexity without requiring additional stress relief steps during manufacturing.
2Productivity
If bonding processes are performed on miniaturized semiconductor devices, then device integration is improved, but stress on the underlying structure increases
Solution Approach 1:
Porous dielectric materials are used as stress-absorbing layers during bonding. The porous structure provides compliance that reduces bonding stress transmission to underlying interconnect structures, enabling successful integration of miniaturized devices without causing stress-related defects.
Solution Approach 2:
Compliant dielectric layers and air gaps serve as intermediary elements between bonding pads and rigid interconnect structures. These intermediaries decouple the bonding process from the underlying structure, allowing high-pressure bonding operations while protecting sensitive miniaturized interconnects from excessive stress.
3Reliability
If air gaps are introduced to reduce stress during bonding, then reliability is improved, but device structure complexity increases
Solution Approach 1:
Porous dielectric materials provide built-in compliance and stress relief without requiring complex three-dimensional air gap structures. The porous nature offers gradual stress distribution, improving bonding reliability while maintaining relatively simple planar device architecture.
Solution Approach 2:
The patent modifies dielectric material parameters (porosity, modulus) to achieve stress relief functionality. By changing material properties rather than introducing complex structural features, air gap functionality is achieved with minimal increase in device structure complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The air gaps improve the performance, reliability, and yield of semiconductor devices by providing a cushion against stress during bonding processes.
Implementation Method 1
the air gap acts as a cushion to reduce the impact of the stress from the wire bond on the underlying structure
Data Source
AI summary
A semiconductor device includes an interconnect structure disposed over a semiconductor substrate. The interconnect structure includes a first interconnect portion and a second interconnect portion. The semiconductor device also includes a first porous dielectric portion disposed between the first interconnect portion and the second interconnect portion, and a dielectric layer surrounding the first porous dielectric portion. The semiconductor device further includes a bonding pad disposed over the dielectric layer and the first porous dielectric portion. The bonding pad and the first porous dielectric portion are separated by a first air gap.