Air-Gap Channel Structure for Faster 3D Memory Arrays
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing demand for high memory capacity in semiconductor memory structures necessitates a reduction in capacitance between adjacent word lines in 3D semiconductor memory structures to enhance operation speed.
Innovation Solution
A 3D semiconductor memory structure is developed with air gaps, which reduces the capacitance between adjacent word lines by forming a three-dimensional memory structure with air gaps and a specific manufacturing method involving the formation of elongated slots, dielectric bars, and dummy pillars.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a 3D semiconductor memory structure is developed to increase memory capacity, then memory capacity is improved, but capacitance between adjacent word lines increases
Solution Approach 1:
The patent introduces air gaps (porous structures) between adjacent word lines in the 3D memory structure. These air gaps act as dielectric regions that reduce the capacitance coupling between neighboring conductive word lines, thereby reducing the harmful capacitive effect while preserving the high-density 3D architecture that provides increased memory capacity.
Solution Approach 2:
The air gaps serve as intermediary regions between adjacent word lines, providing electrical isolation and reducing direct capacitive coupling. This intermediary structure allows the word lines to be positioned closer together for higher density while maintaining reduced parasitic capacitance through the insulating air regions.
2Speed
If capacitance between adjacent word lines is reduced to enhance operation speed, then operation speed is improved, but memory capacity may be compromised
Solution Approach 1:
By incorporating air gaps as porous/dielectric regions between word lines, the patent achieves reduced capacitance that enables faster operation speeds. The air gaps provide electrical isolation that reduces signal interference and charging/discharging time constants, while the overall 3D structure maintains high memory capacity through vertical stacking.
Solution Approach 2:
The patent transitions from a 2D planar layout to a 3D vertical architecture with air gaps strategically positioned in the vertical and lateral dimensions. This dimensional change allows word lines to be stacked vertically with air gap separation, achieving both high density (capacity) and reduced capacitance (speed) simultaneously by utilizing the third dimension for structural optimization.
Data Source
AI summary
A semiconductor device includes a substrate and a memory structure disposed over the substrate. The memory structure includes a pair of first conductive lines, a channel element disposed between the pair of the first conductive lines and formed with an air gap therein, a first memory element disposed to separate one of the pair of the first conductive lines from the channel element, and a second memory element disposed to separate the other one of the pair of the first conductive lines from the channel element. A method for manufacturing the semiconductor device is also disclosed.