Air-Gap Dielectric Structure for Lower Parasitic Capacitance
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Solution Overview
Problem
As semiconductor devices miniaturize, the increased proximity of components leads to higher parasitic capacitance due to conductive components being too close, which adversely affects performance.
Innovation Solution
A semiconductor device is fabricated with a conductive structure, a first and second dielectric layer, and a liner layer, featuring an air gap above the conductive structure to reduce parasitic capacitance, integrated with existing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the distance between conductive components is reduced to achieve size miniaturization, then the device size is reduced, but the parasitic capacitance is increased
Solution Approach 1:
An air gap is introduced as an intermediary dielectric layer between adjacent conductive components. This air gap acts as a mediator that reduces the parasitic capacitance formed between conductive structures while allowing the components to remain in close proximity for miniaturization purposes.
Solution Approach 2:
The dielectric constant parameter is changed by replacing solid dielectric material with air (which has a much lower dielectric constant). This parameter change directly reduces the parasitic capacitance between conductive components while maintaining the physical distance required for miniaturization.
2Productivity
If the distance between conductive components is reduced, then the integration density is increased, but the parasitic capacitance between components increases
Solution Approach 1:
The air gap serves as an intermediary layer that enables higher integration density by allowing conductive components to be placed closer together while simultaneously reducing the parasitic capacitance between them through its low dielectric constant property.
Solution Approach 2:
The air gap is selectively formed only in specific regions between certain conductive components where parasitic capacitance is a concern, while other regions maintain their original dielectric structure. This local application optimizes the balance between integration density and parasitic capacitance reduction.
3Object-generated harmful factors
If an air gap is formed to reduce parasitic capacitance, then the parasitic capacitance is reduced, but the manufacturing process complexity is increased
Solution Approach 1:
The air gap formation process is performed as a preliminary step before subsequent manufacturing steps. By creating the air gap structure early in the fabrication process, the patent simplifies later steps and avoids the need for complex post-processing modifications.
Solution Approach 2:
The air gap formation process is merged with existing manufacturing steps such as dielectric layer deposition and patterning processes. This integration combines multiple functions into unified process steps, reducing overall manufacturing complexity despite the addition of the air gap feature.
Data Source
AI summary
A semiconductor device includes a conductive structure, a first dielectric layer, a second dielectric layer and a liner layer. The conductive structure is located on a substrate. The first dielectric layer covers the conductive structure and the substrate. The second dielectric layer is located on the first dielectric layer. An air gap is present in the first dielectric layer and the second dielectric layer, and is located above the conductive structure. The liner layer covers and surrounds a middle portion of the air gap.