Semiconductor Air-Gap Field Plate for Breakdown and On-Resistance
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Solution Overview
Problem
Conventional semiconductor devices with field plates and shallow trench isolation (STI) regions face a trade-off between on-resistance and breakdown voltage characteristics, where improving breakdown voltage deteriorates on-resistance due to increased current path length.
Innovation Solution
A semiconductor device structure is developed with an air gap of low dielectric constant between the drift region and the insulating pattern, eliminating the need for STI and allowing for a wider contact plug to replace the gate field plate, thereby improving breakdown voltage without degrading on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If STI region is formed to improve breakdown voltage characteristic, then breakdown voltage is improved, but on-resistance deteriorates due to increased current path length
Solution Approach 1:
The patent extracts and removes the STI region from the device structure, replacing it with an air gap. This eliminates the harmful effect of STI on on-resistance while maintaining the beneficial electric field control for breakdown voltage improvement through the gate field plate structure
Solution Approach 2:
The patent changes the dielectric parameter by replacing the solid STI material with an air gap (dielectric constant of air is approximately 1.0, much lower than STI materials). This parameter change reduces the current path length and associated resistance while still providing the necessary electric field management for high breakdown voltage
2Object-generated harmful factors
If field plate is formed to improve on-resistance characteristic, then on-resistance is improved, but breakdown voltage characteristic deteriorates due to electric field concentration
Solution Approach 1:
The patent applies local quality by creating a non-uniform electric field distribution through the gate field plate structure positioned over the air gap. The electric field is locally intensified in specific regions to control carrier drift and improve on-resistance, while the air gap prevents excessive field concentration that would harm breakdown voltage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances breakdown voltage characteristics while maintaining low on-resistance by reducing electric field intensity and eliminating the current path length increase associated with STI, facilitating a more efficient manufacturing process.
Implementation Method 1
forming an air gap having a low dielectric constant between the drift region and an insulating pattern
Data Source
AI summary
Disclosed is a semiconductor device and a method for manufacturing the same and, more particularly, a semiconductor device and a method for manufacturing the same seeking to improve on-resistance and breakdown voltage characteristics compared to existing semiconductor structures by forming an air gap under a gate field plate adjacent to a gate electrode or over a drift region of the semiconductor device.