Air-Gap Interconnect Structure for Low-Capacitance Reliability
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Solution Overview
Problem
Existing interconnect structures in semiconductor devices face challenges in reducing parasitic capacitance and improving reliability as device sizes shrink, necessitating innovative solutions to enhance performance.
Innovation Solution
Incorporation of an air gap structure within the interconnect structure, utilizing low dielectric constant materials to minimize parasitic capacitance and improve reliability by forming an air gap surrounded by a support layer, reducing the dielectric constant and enhancing mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional interconnect structures are used, then device density can be increased through size reduction, but parasitic capacitance increases and reliability deteriorates
Solution Approach 1:
The patent introduces air gaps (porous structures) into the interconnect architecture, replacing solid dielectric material with air-filled voids. This reduces the effective dielectric constant of the interconnect structure, thereby decreasing parasitic capacitance between conductive lines while maintaining mechanical integrity through the surrounding dielectric material.
Solution Approach 2:
The patent creates a composite interconnect structure combining solid dielectric material and air gaps. This composite architecture leverages the low dielectric constant of air (k≈1) while using the solid dielectric to provide mechanical support and structural stability, achieving both electrical performance improvement and structural reliability.
2Object-generated harmful factors
If dielectric constant is reduced to minimize parasitic capacitance, then electrical performance improves, but mechanical stability may deteriorate
Solution Approach 1:
The patent applies local quality by creating air gaps only in specific regions between conductive lines where parasitic capacitance is most problematic, while maintaining solid dielectric material in other regions to provide overall mechanical support. This localized approach optimizes electrical performance without compromising global structural stability.
Solution Approach 2:
The patent implements a nested structure where air gaps are embedded within the solid dielectric material. The air gaps are surrounded and supported by the dielectric structure, creating a hierarchical arrangement where the solid material provides mechanical stability while the embedded air regions reduce parasitic capacitance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The air gap structure effectively reduces parasitic capacitance and enhances the reliability of interconnect structures, improving the overall performance of semiconductor devices.
Implementation Method 1
The air gap structure effectively reduces parasitic capacitance and enhances the reliability of interconnect structures
Data Source
AI summary
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first conductive layer formed over a substrate, and an air gap structure adjacent to the first conductive layer. The semiconductor device structure includes a support layer formed over the air gap structure, and a sidewall surface of the support layer is aligned with a sidewall surface of the air gap structure.