Air-Gap Isolation Structure for Dielectric Breakdown Mitigation
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Solution Overview
Problem
Dielectric breakdown occurs between electrically conductive elements of semiconductor devices with high voltage differentials, leading to potential damage and hindering functionality.
Innovation Solution
Incorporation of air gaps at the edges or corners of conductive structures within dielectric layers to reduce electric field strength, using etching and additional dielectric material to further mitigate breakdown risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dielectric layers are used to isolate conductive elements with high voltage differentials, then Galvanic isolation is achieved, but dielectric breakdown occurs leading to device damage
Solution Approach 1:
The patent applies local quality by creating air gaps specifically at high-stress regions (edges and corners) of conductive structures rather than uniformly throughout. This targeted approach reduces electric field concentration at these critical locations where breakdown is most likely to occur, while maintaining dielectric material elsewhere for overall isolation.
Solution Approach 2:
The patent introduces air gaps as intermediary regions between conductive structures. These air gaps act as mediators that reduce electric field strength and prevent direct breakdown paths through the dielectric layer, thereby protecting the device while maintaining Galvanic isolation functionality.
2Object-affected harmful factors
If air gaps are introduced to reduce electric field strength, then dielectric breakdown risk is reduced, but device structure becomes more complex
Solution Approach 1:
The patent segments the dielectric layer by creating localized air gaps at specific high-stress regions (edges and corners of conductive structures). This segmentation approach introduces complexity only where needed to mitigate breakdown risk, rather than requiring complex structures throughout the entire device.
Solution Approach 2:
The air gaps are formed during the fabrication process through preliminary etching of the dielectric layer before final device assembly. This preliminary action incorporates the breakdown protection into the device structure during manufacturing, avoiding the need for additional complex components or post-processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces the likelihood of dielectric breakdown by a factor of around 3, enhancing the reliability and longevity of semiconductor devices.
Implementation Method 1
one or more air gaps in a first dielectric layer disposed between two electrically conductive structures. The air gaps reduce electric field strength between the two electrically conductive structures
Data Source
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AI summary
A semiconductor device may include a semiconductor substrate and an isolation structure including a first dielectric layer formed over the semiconductor substrate, the first dielectric layer including one or more air gaps, and a first conductive structure formed on the dielectric layer, the conductive structure having a lower surface that faces the semiconductor substrate. Respective air gaps of the one or more air gaps of the first dielectric layer each may be disposed directly between corners of the lower surface of the conductive structure and the semiconductor substrate.