Air Gap Microelectronic Structure Reducing Cross-Talk
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Solution Overview
Problem
Current semiconductor structures face challenges in achieving enhanced performance as device dimensions decrease, particularly in reducing cross-talk between copper-containing conductor layers, which is addressed by incorporating air gaps with a low dielectric constant material between patterned conductor layers.
Innovation Solution
The implementation of a microelectronic structure with patterned conductor layers separated by air gaps, where a liner layer lines these gaps and a second dielectric layer encloses voids between the conductor layers, providing a low dielectric constant material and enhancing performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If low dielectric constant dielectric materials are used to separate copper containing conductor layers, then cross-talk between adjacent conductor layers is reduced, but device dimensions continue to decrease requiring further performance enhancement
Solution Approach 1:
The patent introduces air gaps (voids) within the dielectric layer to create a porous structure. Air has a dielectric constant of approximately 1.0, which is significantly lower than conventional dielectric materials (k=3.0-4.0). This porous configuration reduces the effective dielectric constant of the insulation layer, thereby reducing cross-talk between adjacent copper conductor layers while maintaining electrical isolation.
Solution Approach 2:
The dielectric layer is constructed as a composite structure combining conventional dielectric material with air gaps (voids). This composite configuration allows the structure to achieve an effective dielectric constant lower than either component alone, optimizing both insulation performance and signal isolation while accommodating continued miniaturization of device dimensions.
2Reliability
If copper containing conductor materials are used for patterned conductor layers, then current carrying capabilities are improved, but cross-talk between adjacent conductor layers increases
Solution Approach 1:
Air gaps (porous regions) are introduced into the dielectric layer surrounding the copper conductor layers. Since air has a dielectric constant of approximately 1.0 compared to conventional dielectric materials (k=3.0-4.0), this porous structure reduces the effective dielectric constant of the insulation layer, thereby reducing capacitive coupling and cross-talk between high-current copper conductor layers while preserving their current carrying capabilities.
3Productivity
If device dimensions are decreased to advance semiconductor technology, then integration density is improved, but performance enhancement becomes increasingly difficult to achieve
Solution Approach 1:
The patent changes the dielectric parameter (dielectric constant) by introducing air gaps with k≈1.0 into the dielectric layer. This parameter change reduces the effective dielectric constant of the insulation material, which reduces cross-talk and signal interference between closely-spaced conductor layers, thereby enabling continued performance enhancement as device dimensions decrease and integration density increases.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces cross-talk between conductor layers and improves current carrying capabilities, leading to enhanced semiconductor structure performance.
Implementation Method 1
Low dielectric constant dielectric materials typically have a dielectric constant less than 4.0, and more preferably less than 3.0, where, for example, vacuum or air is understood to have a comparatively low dielectric constant of unity.
Implementation Method 2
a liner layer lining the plurality of air gaps interposed between the plurality of patterned conductor layers and covering a top surface of the patterned conductor layers
Data Source
AI summary
A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.