Air Gap Spacer Structure for Semiconductor Integration
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Solution Overview
Problem
The integration of semiconductor devices is hindered by the difficulty in creating finely patterned air spacers without them being filled with conductive material, leading to short circuits and device failure.
Innovation Solution
The semiconductor device incorporates spacer structures with an air gap and an insulating spacer between bit line and contact structures, where a capping spacer covers the air gap and extends between the bit line and contact structures, preventing conductive material infiltration and ensuring proper insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If air spacers are used as insulation patterns, then integration density is improved, but the air spacers may be filled with conductive material causing short circuits
Solution Approach 1:
The spacer structure is divided into multiple segments: an air gap portion providing insulation, an insulating spacer portion for structural support, and a capping spacer portion for sealing. This segmentation allows each part to perform its specific function effectively while maintaining overall reliability.
Solution Approach 2:
The spacer structure combines multiple materials with different properties: air (for insulation), insulating material (for structural stability), and conductive material in the capping spacer (for sealing and electrical connection). This composite approach resolves the contradiction by using material diversity to achieve both high integration and reliability.
2Productivity
If finely patterned air spacers are used, then integration density is improved, but manufacturing precision requirements increase
Solution Approach 1:
The formation process is segmented into multiple steps: forming the air gap, depositing the insulating spacer, and adding the capping spacer. This segmentation simplifies each individual step's precision requirements compared to forming a complete spacer in one step.
Solution Approach 2:
The air gap is formed first as a preliminary structure before adding the insulating and capping spacers. This preliminary action establishes the basic geometry and reduces the precision burden on subsequent manufacturing steps.
3Reliability
If capping spacer extends above the conductive layer, then insulation reliability is improved, but device complexity increases
Solution Approach 1:
The capping spacer is positioned locally only where needed - extending above the conductive layer at critical locations for sealing, while being lower or absent in other areas. This local quality approach maintains reliability where necessary without unnecessarily increasing overall device complexity.
Data Source
AI summary
First dopant regions and second dopant regions are provided at both sides of the gate structures. Conductive lines cross over the gate structures and are connected to the first dopant regions. Each of the conductive lines includes a conductive pattern and a capping pattern disposed on the conductive pattern. Contact structures are provided between the conductive lines and are connected to the second dopant regions. Each of the contact structures includes a lower contact pattern disposed on the second dopant region and an upper contact pattern disposed on the lower contact pattern. A bottom surface of the upper contact pattern is lower than a top surface of the conductive pattern.