Air Spacer Transistor Layout for Dense Low Cross-Talk Chips
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in increasing transistor density while preventing cross-talk and leakage between closely packed transistors, as existing isolation structures are not effective enough to maintain device performance and reliability.
Innovation Solution
The use of air spacer structures within transistors and high-k dielectric spacer structures between transistors reduces capacitance and allows for closer transistor placement, utilizing air spacer structures to mitigate capacitance within transistors and high-k dielectric spacer structures to provide effective isolation between them.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If transistors are arranged closer to increase device density, then more components can be integrated into a given area, but cross-talk and leakage between transistors increase
Solution Approach 1:
The isolation structure is segmented into multiple portions: a first isolation structure portion and a second isolation structure portion. The first portion is positioned at a first distance from the first transistor and a second distance from the second transistor, while the second portion is positioned at a third distance from the first transistor and a fourth distance from the second transistor. This segmentation allows each portion to independently manage isolation requirements, enabling transistors to be placed closer together while maintaining effective cross-talk prevention through the coordinated arrangement of multiple isolation segments.
2Reliability
If isolation structures are made larger to prevent cross-talk, then device reliability improves, but device density decreases
Solution Approach 1:
The isolation structure extends in multiple spatial dimensions with specific distance relationships. The first isolation structure portion is positioned at a first distance from the first transistor and a second distance from the second transistor, while the second portion is positioned at a third distance from the first transistor and a fourth distance from the second transistor. This multi-dimensional positioning allows the isolation structures to provide effective cross-talk prevention through strategic spatial arrangement rather than simply increasing size, thereby maintaining high device density while ensuring reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases transistor density while maintaining or improving performance by reducing capacitance and preventing cross-talk, resulting in enhanced device reliability and speed.
Implementation Method 1
air spacer structures within transistors and high-k dielectric spacer structures between transistors reduces capacitance
Implementation Method 2
high-k dielectric spacer structures between transistors reduces capacitance and allows for closer transistor placement
Data Source
AI summary
In some embodiments, the present disclosure relates to an integrated chip including a first transistor and a second transistor arranged over a substrate. The first transistor includes first and second source/drain regions over the substrate and includes a first channel structure directly between the first and second source/drain regions. A first gate electrode is arranged over the first channel structure and is between first and second air spacer structures. The second transistor includes third and fourth source/drain regions over the substrate and includes a second channel structure directly between the third and fourth source/drain regions. A second gate electrode is arranged over the second channel structure and is between third and fourth air spacer structures. The integrated chip further includes a high-k dielectric spacer structure over a low-k dielectric fin structure between the first and second channel structures to separate the first and second gate electrodes.