Al-Ti-Si Alloy Electrode for Semiconductor Devices
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Solution Overview
Problem
Semiconductor devices with aluminum alloy electrodes face increased strain and reduced mechanical strength under high-temperature conditions, leading to potential failure in high-temperature environments, and existing solutions like Al—Si electrodes suffer from Si nodule formation and reduced surface area.
Innovation Solution
A semiconductor device with an electrode formed from an Al—Ti—Si alloy, containing 0.5-1.0% silicon and 0.8-3.0% titanium by weight, with a thickness of at least 1 μm and average particle size not exceeding 1 μm, which suppresses Si nodule formation and enhances mechanical strength through controlled Ti content and particle size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an Al—Si electrode is used to suppress Al spiking, then the occurrence of Al spiking is suppressed, but Si nodules form at the interface reducing effective surface area
Solution Approach 1:
The patent changes the compositional parameters of the electrode by adding titanium to the Al-Si alloy, creating an Al-Si-Ti electrode. This parameter change (adding Ti element) modifies the diffusion behavior and prevents Si nodule formation while maintaining Al spiking suppression. The specific composition range (Si: 0.5-1.0 at%, Ti: 0.1-0.5 at%) is optimized to achieve both goals simultaneously.
Solution Approach 2:
The patent creates a composite electrode material combining Al, Si, and Ti elements. This composite structure leverages the beneficial effects of each element: Al as base material, Si for suppressing Al spiking, and Ti for preventing Si nodule formation. The composite material approach resolves the contradiction by integrating multiple functional elements in specific proportions.
2Temperature
If the semiconductor device is used in high-temperature environments, then the operating temperature range is expanded, but the strain on Al alloy electrodes increases approximately two-fold
Solution Approach 1:
The patent modifies the electrode's compositional parameters by incorporating Ti into the Al-Si alloy. This composition change alters the thermal expansion characteristics and mechanical properties of the electrode, enabling it to withstand higher temperatures with reduced strain accumulation. The optimized composition (Si: 0.5-1.0 at%, Ti: 0.1-0.5 at%) provides thermal stability for high-temperature operation.
3Object-generated harmful factors
If the titanium content in the electrode is increased to suppress Si nodule formation, then Si deposition is reduced, but the mechanical strength may be compromised
Solution Approach 1:
The patent optimizes the Ti content parameter within a specific range (0.1-0.5 at%) to achieve the right balance. This parameter optimization ensures sufficient Ti is present to react with precipitated Si and prevent nodule formation, while avoiding excessive Ti that would harmfully affect the electrode's mechanical strength. The lower bound (0.1 at%) ensures effective Si nodule suppression, while the upper bound (0.5 at%) maintains mechanical integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Al—Ti—Si alloy electrode exhibits improved mechanical strength and durability under high-temperature conditions, maintaining superior stress resistance and conduction efficiency while preventing Si nodule formation and strain increase.
Implementation Method 1
the precipitated Si is reacted with the Ti and consumed as titanium silicide (TiSix), thereby suppressing Si deposition
Data Source
AI summary
A semiconductor device including a semiconductor substrate and an electrode formed from an alloy containing aluminum, silicon and titanium. The silicon content in the electrode is from 0.5 to 1.0% by weight relative to the total weight of the electrode, the titanium content in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, and the thickness of the electrode is at least 1 μm.