Multi-Chamber ALD Apparatus for Thin Film Composition Control
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Solution Overview
Problem
Current atomic layer deposition (ALD) processes face challenges in forming thin films with desired composition and quality due to the formation of polycrystalline or amorphous structures and trapped reaction byproducts, which affect the thermal budget and overall film quality.
Innovation Solution
An ALD apparatus with multiple process chambers for sequential adsorption of different source gases, followed by surface treatment and heat treatment to form a single compound thin film, effectively removing reaction byproducts and managing thermal budgets.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple source gases are supplied sequentially to form different material films, then the composition control of thin film is improved, but the process complexity increases
Solution Approach 1:
The patent divides the thin film formation process into multiple sequential stages, each involving the supply of a different source gas to deposit a specific material film. The process chamber is segmented to handle different gas supply sequences, allowing precise control over the composition of the final thin film by independently controlling each deposition stage.
2Manufacturing precision
If surface treatment process is performed to remove reaction byproducts, then the film quality is improved, but the processing time increases
Solution Approach 1:
The patent incorporates surface treatment processes at predetermined stages during the thin film formation process, rather than as a separate post-processing step. By performing surface treatment preliminarily during the deposition sequence, reaction byproducts are removed in advance, preventing their entrapment in the final film and maintaining high film quality without extending overall processing time.
3Stability of the object's composition
If heat treatment process is performed to transform material films into single compound thin film, then the film homogeneity is improved, but the thermal budget increases
Solution Approach 1:
The patent merges the heat treatment process with the thin film formation process by performing thermal treatment in-situ within the process chamber during the deposition sequence. This integration allows the transformation of multiple material films into a single compound thin film while managing the thermal budget efficiently, as the heating is coordinated with the gas supply and deposition stages rather than being a separate high-energy process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the quality and reliability of thin films by preventing undesired phase formation and optimizing thermal processing, leading to improved semiconductor device performance.
Implementation Method 1
supply a first source gas to a substrate and to thereby induce adsorption of a first material film on the substrate
Implementation Method 2
perform a surface treatment process on each of the first to third material films and to remove a reaction byproduct
Implementation Method 3
perform a heat treatment process on the substrate and to thereby transform the first to third material films into a single compound thin film
Data Source
AI summary
An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.