Atomic Layer Deposition Apparatus with Vertical Injector Arrays
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Solution Overview
Problem
Conventional atomic layer deposition equipment faces challenges with low throughput, non-uniform thin film deposition, and difficulty in controlling internal pressure and pollution in single-type, batch-type, and semi-batch-type systems, leading to decreased productivity and yield.
Innovation Solution
An atomic layer deposition apparatus with a reaction chamber and injectors positioned to spray reaction gas vertically onto multiple semiconductor substrates, allowing for simultaneous deposition and improved control of internal pressure, enhancing throughput and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single-type atomic layer deposition apparatus is used to form thin films on one semiconductor substrate, then deposition quality is maintained, but throughput decreases
Solution Approach 1:
The patent divides the deposition system into multiple independent injector units, each capable of depositing thin films on individual semiconductor substrates simultaneously. This segmentation allows parallel processing while maintaining the precision of single-substrate deposition through controlled reaction material flow to each substrate.
Solution Approach 2:
The patent transitions from processing substrates sequentially in a single dimension to processing multiple substrates simultaneously in three-dimensional space. Multiple substrates are positioned at different locations within the reaction chamber, allowing parallel deposition operations that increase throughput while maintaining deposition quality through precise control of reaction material distribution.
2Productivity
If a batch-type atomic layer deposition apparatus stacks multiple semiconductor substrates, then throughput increases, but thin film uniformity decreases due to deviation according to supply direction
Solution Approach 1:
The patent implements local quality control by providing individual injector units positioned to deliver reaction materials uniformly to each semiconductor substrate. Each injector is independently controlled to ensure that substrates at different locations within the batch receive equivalent amounts of reaction material, eliminating the uniformity deviations that occur in conventional batch systems.
Solution Approach 2:
The system incorporates feedback control mechanisms that monitor the deposition process for each substrate and adjust reaction material flow rates accordingly. This ensures uniform thin film formation across all substrates in the batch by compensating for variations in supply direction and position.
3Productivity
If a semi-batch type apparatus horizontally arrays multiple semiconductor substrates, then throughput increases, but internal pressure control and pollution management become difficult
Solution Approach 1:
The reaction chamber is segmented into multiple independent zones, each with its own injector unit and controlled environment. This segmentation allows independent pressure control for each substrate position, maintaining reliable internal pressure conditions even when processing multiple substrates simultaneously.
Solution Approach 2:
The system employs dynamic pressure control mechanisms that can independently adjust pressure conditions in different regions of the reaction chamber. This dynamic control maintains optimal pressure conditions for each substrate throughout the deposition process, ensuring reliability while processing multiple substrates in parallel.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus increases throughput and productivity while ensuring uniform thin film deposition and improved control over internal pressure and pollution, thereby enhancing production yield.
Implementation Method 1
a heater which support a plurality of semiconductor substrates with a given interval within the reaction chamber and heats the plurality of semiconductor substrates
Implementation Method 2
a chemical absorption and desorption through a saturated surface reaction of reaction material on the semiconductor substrate surface
Implementation Method 3
atomic layer deposition technology is a thin film deposition of a new concept using a chemical absorption and desorption through a saturated surface reaction
Data Source
AI summary
An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.