ALD Device Baffle for Uniform Precursor Flow
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Solution Overview
Problem
Current atomic layer deposition (ALD) processes face challenges in controlling the uniformity of thin film deposition due to unregulated precursor flow fields, leading to excessive precursor usage and turbulence, which affects the quality and cost-effectiveness of the process.
Innovation Solution
An atomic layer deposition device featuring a chamber with a support unit, baffle, and hollow component that forms a reaction space to control precursor flow, using a baffle connected to the chamber or hollow component to create a slow and steady flow field by surrounding the reaction space and allowing controlled precursor deposition on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large closed chamber is used to contain precursors during ALD process, then precursor retention is improved, but precursor cost increases and flow uniformity deteriorates
Solution Approach 1:
The patent divides the chamber into two distinct regions: a reaction region containing the substrate and heater where deposition occurs, and a precursor storage region separated by a partition wall. This segmentation allows the precursors to be contained in a larger overall volume for retention while limiting their presence in the smaller reaction region during deposition, reducing the amount of precursor needed while maintaining reliability.
2Device complexity
If precursors are pumped out through a single bottom pumping port, then device complexity is reduced, but flow stability deteriorates
Solution Approach 1:
The patent extracts the pumping function from a single location and distributes it to multiple locations. By providing pumping ports at both the top and bottom of the chamber, the system creates multiple extraction points for precursor removal. This multi-point extraction stabilizes the flow by preventing turbulence that would occur with single-point pumping, while the modular port design keeps device complexity manageable.
3Quantity of substance
If chamber volume is reduced to decrease precursor amount, then precursor cost is reduced, but flow uniformity deteriorates due to turbulent flow
Solution Approach 1:
The partition wall segments the chamber to separate precursor storage from the reaction zone. This allows the overall chamber to be compact (reducing total precursor amount) while the reaction region maintains appropriate dimensions for uniform flow. The segmentation ensures precursors are introduced in a controlled manner into the reaction region, preventing turbulence that would compromise deposition uniformity.
Solution Approach 2:
The partition wall acts as an intermediary structure that mediates between the need for compact chamber volume and the requirement for uniform flow. It controls the interface between the precursor storage region and reaction region, regulating precursor introduction to maintain laminar flow conditions in the reaction zone even when the overall chamber volume is reduced.
4Productivity
If precursors are pumped out quickly to reduce process time, then productivity is improved, but flow stability deteriorates causing poor uniformity
Solution Approach 1:
The patent implements periodic action through sequential pumping stages. First, top pumping ports are activated to rapidly remove excess precursors and establish initial flow stability. Then, bottom pumping ports are activated to complete the precursor removal and maintain stable flow conditions throughout the chamber. This periodic, multi-stage pumping approach achieves both high productivity and flow stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves improved uniformity and reduced precursor usage by forming a stable, slow flow field, enhancing the quality of thin film deposition and reducing costs associated with precursor usage.
Implementation Method 1
the baffle is moved downward by gravitational force
Implementation Method 2
pump out the precursor to form a slow flow field
Implementation Method 3
the process allows the precursor to be chemically adsorbed on the surface of the substrate
Data Source
AI summary
An atomic layer deposition device is disclosed. The atomic layer deposition device includes a chamber, a precursor inlet, a heater, a support unit, a hollow component, and a baffle. When the heater and the support unit are driven by a lifting device to approach the hollow component, the support unit and the baffle surround and set bounds to a reaction space, so that the flow field of the process fluid, such as precursor or purge gas, can be adjusted stably to make a uniform deposition on the substrate.