Atomic Layer Deposition Buffer Tank Gas Supply
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Solution Overview
Problem
Conventional atomic layer deposition apparatuses struggle to stably supply source gas during shorter deposition cycles due to inefficient use of the source gas vaporizer, leading to incomplete gas supply during the source gas supply process.
Innovation Solution
The apparatus employs multiple buffer tanks with controlled fill and supply valves to ensure continuous source gas supply to the film forming chamber, even when the source gas supply process is shortened, by alternately opening supply valves and filling other buffer tanks with source gas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the purge time and exhaust time are shortened to reduce deposition cycle time, then productivity is improved, but the source gas supply becomes unstable and insufficient
Solution Approach 1:
The system divides the source gas supply function into multiple independent buffer tanks (first buffer tank and second buffer tank), each capable of supplying source gas independently. This segmentation allows the system to maintain stable gas supply even when cycle time is reduced, as one tank can supply gas while another is being refilled or pressurized.
Solution Approach 2:
The buffer tanks are pre-filled with source gas before the deposition cycle begins. During the deposition process, the tanks maintain predetermined pressure levels, ensuring that source gas is immediately available when needed, without requiring time-consuming on-demand generation during the shortened cycle.
2Device complexity
If a single buffer tank is used to supply source gas, then device complexity is reduced, but the source gas supply cannot keep up with shortened deposition cycles
Solution Approach 1:
The system uses multiple buffer tanks instead of a single tank, dividing the supply function across multiple units. This allows parallel operation where tanks can be refilled alternately, increasing the overall source gas supply rate to match shortened deposition cycles without excessive complexity.
Solution Approach 2:
The multiple buffer tanks enable continuous source gas supply by alternating between tanks - while one tank supplies gas to the reaction chamber, another tank is being refilled or pressurized. This continuous action ensures uninterrupted gas flow even at high deposition rates.
3Quantity of substance
If the source gas vaporizer capacity is fully utilized, then source gas generation is maximized, but pressure stability deteriorates during supply
Solution Approach 1:
The buffer tanks are filled with source gas and maintained at predetermined pressure levels in advance of the deposition cycle. This preliminary action allows the vaporizer to operate at full capacity for gas generation while the buffer tanks buffer pressure fluctuations, delivering stable pressure during the actual deposition process.
Solution Approach 2:
The buffer tanks act as intermediary reservoirs between the source gas vaporizer and the reaction chamber. They decouple the vaporizer's high-capacity generation from the chamber's pressure-stable consumption, allowing the vaporizer to maximize gas production while the buffer tanks regulate and stabilize the pressure delivered to the chamber.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures stable and consistent source gas supply to the film forming chamber, preventing interruptions and optimizing the use of the source gas vaporizer's capacity, even during shorter deposition cycles.
Implementation Method 1
the source gas vaporizer 351, and supplies the vaporized material into the film forming chamber 301
Implementation Method 2
while the substrate 303 is heated to a predetermined temperature by the heating mechanism of the substrate table 302
Implementation Method 3
the evacuation of the chamber 301 by the exhaust mechanism 304
Data Source
AI summary
An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.