ALD Chamber Protective Coating for Erosion and Particle Control
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Solution Overview
Problem
Existing semiconductor processing chambers face issues with erosion resistance, adhesive strength, and micro-roughness of protective structures, leading to reduced component lifetime and process efficiency.
Innovation Solution
A protective structure is formed using atomic layer deposition (ALD) with amorphous and crystalline layers to enhance erosion resistance, adhesive strength, and surface micro-roughness, reducing particle defects and extending chamber durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective structure is formed on the chamber using conventional methods, then the chamber provides a controlled environment for processing, but the protective structure has insufficient erosion resistance and reduced component lifetime
Solution Approach 1:
The protective structure is formed as a composite of multiple layers deposited by atomic layer deposition, including a first protective layer and a second protective layer with different material compositions and crystal structures (amorphous and crystalline), providing synergistic erosion resistance and durability
2Duration of action of stationary object
If a protective structure is formed on the chamber, then the chamber durability is extended, but the adhesive strength between the protective structure and chamber surface is insufficient
Solution Approach 1:
The atomic layer deposition process parameters are optimized to control the chemical composition and bonding characteristics of each protective layer, ensuring strong chemical adhesion to the chamber substrate while maintaining the desired protective properties
3Reliability
If a protective structure is formed on the chamber, then the chamber provides protection during processing, but the surface micro-roughness is insufficient leading to particle defects
Solution Approach 1:
The protective structure incorporates layers with different surface characteristics, where the crystalline second protective layer provides controlled micro-roughness features that prevent particle formation while the amorphous first protective layer provides a smooth adhesive interface with the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ALD-based protective structure improves chamber durability, reduces particle defects, and increases the reliability and cost-effectiveness of semiconductor processing by providing better plasma/radical erosion resistance and higher adhesive strength.
Implementation Method 1
The protective structure includes a first protective layer disposed on a surface of the chamber and a second protective layer disposed on the first protective layer, both formed by atomic layer deposition
Data Source
AI summary
A system for processing a semiconductor device is provided. The system includes a chamber, a carrier disposed in the chamber and configured to holding a substrate, and a protective structure disposed on the chamber. The protective structure includes a first protective layer disposed on a surface of the chamber and a second protective layer disposed on the first protective layer. The first protective layer is amorphous. The second protective layer is crystalline.