ALD Silicon Oxide Chamber Coating for Low Radical Recombination

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

In semiconductor processing, radical recombination on chamber surfaces reduces the effectiveness of remote plasma processes, particularly after chamber cleaning, as radicals fail to reach the substrate due to high recombination rates on chamber surfaces.

Innovation Solution

A low recombination material coating, such as silicon oxide, is applied to chamber surfaces using atomic layer deposition, and periodically reconditioned with an oxidizing plasma to maintain a low radical recombination rate, ensuring radicals can effectively process substrates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If chamber surfaces are cleaned to remove contaminants, then substrate processing quality improves, but radical recombination rate increases reducing process effectiveness

Engineering Contradiction:

Improvesubstrate processing qualityVSAvoidradical recombination rate

Core Design Contradiction:

Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

A low recombination material coating is applied to chamber surfaces before substrate processing to preemptively reduce radical recombination. The coating is restored periodically through oxidizing plasma exposure, ensuring low recombination conditions are maintained throughout production batches.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The chemical composition and surface properties of chamber walls are modified by coating them with low recombination materials such as silicon oxide. This changes the surface parameters to reduce radical recombination, and the coating is periodically restored through oxidizing plasma treatment that reforms the low recombination surface chemistry.

Inventive Principle:

Principle #35Parameter changes

2Quantity of substance

If low recombination material coating is applied to chamber surfaces, then radical availability for substrate processing improves, but process complexity and maintenance requirements increase

Engineering Contradiction:

Improveradical availabilityVSAvoidcoating application and maintenance

Core Design Contradiction:

Quantity of substanceVSDevice complexity

Solution Approach 1:

The oxidizing plasma treatment serves a dual function: it acts as a cleaning step and simultaneously reforms the low recombination material coating on chamber surfaces. This self-restoring mechanism eliminates the need for separate coating application steps, reducing operational complexity while maintaining radical availability.

Inventive Principle:

Principle #25Self-service

Solution Approach 2:

The oxidizing plasma exposure performs multiple functions: it cleans chamber surfaces and simultaneously restores the low recombination material coating. This multi-functionality reduces the number of separate maintenance operations needed, balancing the benefits of improved radical availability with acceptable process complexity.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The low recombination material coating significantly reduces radical recombination, maintaining high radical availability for substrate processing and improving film uniformity and deposition rate consistency throughout batches.

Implementation Method 1

flowing a first reactant into the reaction chamber and allowing the first reactant to adsorb onto exposed surfaces within the reaction chamber

Methodology Applied

Scientific EffectAdsorption: Adsorption

Implementation Method 2

forming a low recombination material coating on exposed surfaces within the reaction chamber through an atomic layer deposition process

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 3

exposing the reaction chamber to an oxidizing plasma to recondition the exposed surfaces within the reaction chamber and thereby reform the low recombination material coating

Methodology Applied

Scientific EffectPlasma: Plasma

Implementation Method 4

exposing the reaction chamber to an oxidizing plasma to recondition the exposed surfaces

Methodology Applied

Scientific EffectOxidation: Oxidation

Data Source

PatentUS11920239B2Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma

Publication Date: 2024.03.05 LAM RES CORP

AI summary

Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.