Rotating Substrate ALD Chamber Layout for Gas Separation and Purging
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Solution Overview
Problem
The atomic layer deposition (ALD) process is limited by the slow deposition speed compared to chemical vapor deposition (CVD) and inefficiencies in gas handling, leading to incomplete purging and potential mixing of source and reactant gases, which affects the formation of pure ALD films.
Innovation Solution
A substrate processing apparatus with a chamber design that separates the source gas and reactant gas spaces using a purge gas distribution unit, allowing for sequential and plasma-activated gas distribution to prevent mixing and ensure complete purging, thereby enhancing film quality and deposition speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the ALD process is used to form a uniform thin film on a fine pattern, then the manufacturing precision is improved, but the productivity deteriorates due to slow deposition speed
Solution Approach 1:
The process chamber is divided into a source gas supply region and a reactant gas supply region separated by a partition wall. This spatial segmentation allows independent optimization of each gas supply region, enabling faster gas switching and purging while maintaining the sequential reaction mechanism required for uniform ALD film deposition on fine patterns.
2Productivity
If the gas switching frequency is increased to improve productivity, then the deposition speed is improved, but the manufacturing precision deteriorates due to incomplete purging and gas mixing
Solution Approach 1:
A purge gas supply unit is introduced as an intermediary between the source gas and reactant gas supply regions. This intermediary component actively removes residual gases from the chamber during transitions, preventing gas mixing even at high switching frequencies. The purge gas flows through the partition wall structure to ensure complete clearance of previous gas, thereby maintaining film purity while enabling faster deposition cycles.
3Productivity
If the chamber volume is reduced to improve gas purging efficiency, then the productivity is improved, but the manufacturing precision deteriorates due to insufficient reaction space
Solution Approach 1:
The chamber is segmented into distinct source gas and reactant gas regions by a partition wall, creating compact yet functionally adequate reaction spaces. This segmentation allows the chamber to be small enough for efficient purging while providing sufficient volume in each region for complete gas reactions. The partition structure ensures that each gas has adequate space to react fully with the substrate before the next gas is introduced.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enables the formation of pure ALD thin films with improved film quality and densification by preventing gas mixing and ensuring efficient purging, thus overcoming the limitations of traditional ALD processes.
Implementation Method 1
The source gas may be adsorbed onto the surface of the substrate by supplying the source gas to the substrate first
Implementation Method 2
by supplying the reactant gas to the substrate, the reactant gas may react with the source gas adsorbed onto the surface of the substrate
Implementation Method 3
the other source gas may be removed by using a purge gas. Subsequently, by supplying the reactant gas to the substrate, the reactant gas may react with the source gas adsorbed onto the surface of the substrate, and then, the other reactant gas may be purged by using the purge gas
Data Source
AI summary
The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.