ALD Chamber Region Segmentation for Multi-Thickness Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The conventional atomic layer deposition (ALD) process faces inefficiencies in handling different layer deposition thicknesses for wafers within a batch load, leading to low wafer capacity utilization and unsatisfactory tool efficiency, particularly during the sidewall oxidation stage, where only fifty pieces with the same thickness can be processed due to the limitations of uniform size injectors and prolonged quality check times.
Innovation Solution
The ALD apparatus features a chamber with multiple regions and a heating device providing specific temperature ranges, along with injectors having holes of different geometric parameters to allow for the simultaneous deposition of two or more thicknesses of films in a single batch, utilizing region temperature tuning and hole size optimization to enhance deposition efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If uniform size injectors are used in the chamber, then the device structure is simple, but the ability to handle different layer deposition thicknesses is limited
Solution Approach 1:
The chamber is divided into multiple regions, and the injector is segmented into multiple holes with different geometric parameters. Each hole is configured to deliver precursor material to specific regions, enabling simultaneous deposition of different film thicknesses on different wafers within the same batch. This segmentation allows the system to handle diverse deposition requirements without requiring completely different injector designs for each thickness requirement.
Solution Approach 2:
Different holes in the injector are designed with specific geometric parameters (size, shape, position) tailored to the local requirements of each chamber region. This local quality approach ensures that each region receives the appropriate precursor material flow for its intended deposition thickness, while the overall injector structure remains integrated and manageable.
2Productivity
If multiple different thicknesses are formed in one batch, then the wafer capacity utilization increases, but the process control difficulty increases
Solution Approach 1:
The batch processing is segmented into different regional processes within the same chamber. By dividing the chamber into multiple regions with different temperature profiles and precursor delivery rates, the system can simultaneously process wafers requiring different thicknesses without requiring separate processing batches, thereby maintaining high capacity utilization while managing control complexity through regional independence.
Solution Approach 2:
The system utilizes parameter changes in temperature and precursor flow rate across different chamber regions to achieve different deposition thicknesses. The heating device provides specific temperature ranges for different regions, and the injector delivers precursor material at different rates to different regions, allowing precise control of deposition thickness without increasing overall process complexity.
3Manufacturing precision
If region temperature tuning is implemented, then the deposition precision for different thicknesses is improved, but the heating device complexity increases
Solution Approach 1:
The heating device is segmented into multiple heating zones corresponding to different chamber regions. Each heating zone can be independently controlled to provide specific temperature ranges required for different deposition thicknesses. This segmentation enables precise temperature control for each region without requiring a completely separate heating system for each thickness requirement.
Solution Approach 2:
The heating device provides local quality temperature control, where each chamber region receives the specific temperature profile needed for its intended deposition thickness. This local temperature optimization ensures precise deposition control in each region while the heating device maintains an integrated structure through coordinated control of multiple heating zones.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the ALD process efficiency to 90% and daily throughput, enabling the formation of multiple thicknesses in a single batch cycle, thereby improving capacity utilization and tool efficiency by aligning processing times for different thicknesses.
Implementation Method 1
The heating device respectively provides specific temperature ranges for the plurality of regions
Implementation Method 2
The ALD process employs a precursor material which can react with or chemisorb on a surface in process to build up successively deposited layers
Data Source
AI summary
An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. By flowing precursor gases at different flow rates in the different regions, thin films can be simultaneously formed in the different regions having different film thicknesses.