ALD Chamber Shielding Component for Precursor Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In atomic layer deposition processes, unreacted precursors often adhere to the inner surfaces of the chamber, leading to dirt coating, which is difficult to clean and results in poor product yield and reduced production efficiency.
Innovation Solution
An atomic layer deposition equipment with a shielding component and gas inlets that introduce an inactive gas to create a pressure difference, allowing most unreacted precursors to be pumped out, reducing adhesion to the chamber surfaces and extending cleaning cycles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If unreacted precursors are pumped out from the bottom pumping port, then the precursors can be removed from the chamber, but the precursors adhere to the inner wall surface, inner bottom surface, and adjacent area forming dense coating
Solution Approach 1:
A shielding component is introduced as an intermediary element between the precursor flow path and the chamber inner surfaces. This shielding component redirects the precursor flow toward the pumping port while preventing direct contact with the inner wall surface, inner bottom surface, and adjacent area, thereby reducing harmful precursor adhesion and dirt coating formation
Solution Approach 2:
Gas inlets are positioned to introduce gas flows that create pneumatic barriers or flow patterns directing unreacted precursors toward the pumping port. The gas flow dynamics are controlled to prevent precursor deposition on chamber surfaces while maintaining effective precursor removal through the pumping port
2Reliability
If regular cleaning of the chamber is performed to remove precursor coating, then the chamber can be maintained, but the cleaning process is time-consuming and labor-intensive
Solution Approach 1:
The shielding component and gas inlet system perform preliminary action by preventing precursor adhesion to chamber surfaces during the deposition process. By controlling the precursor flow path in real-time, the system minimizes dirt coating formation before it occurs, eliminating the need for frequent and time-consuming cleaning operations
Solution Approach 2:
The system achieves self-service by using the deposition process parameters themselves (gas flow, pressure control) to prevent precursor accumulation on chamber surfaces. The same process conditions that enable deposition also control precursor removal, making the system self-regulating and reducing external cleaning interventions
3Object-generated harmful factors
If the shielding component and gas inlet system are added to control precursor flow, then precursor adhesion is reduced, but the device complexity increases
Solution Approach 1:
The shielding component is strategically positioned only in the critical areas where precursor adhesion occurs (inner wall surface, inner bottom surface, and adjacent area). The gas inlets are localized to specific positions that create effective flow patterns. This localized approach controls precursor adhesion without requiring complete system redesign, minimizing the increase in device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The equipment effectively reduces precursor adhesion to the chamber surfaces, optimizing product yield and prolonging the cleaning cycle, thereby improving cleaning efficiency and extending equipment lifetime.
Implementation Method 1
gas is introduced into the chamber from the gas inlet to make the gas enter and diffuse to a gap between the inner surface of the chamber and the shielding component, and further diffuse to the containing space of the chamber. In this way, the gas pressure in part of the containing space in the chamber will increase and assist the pumping port to pump out a majority of unreacted precursors
Implementation Method 2
The shielding component shields part of the inner surface of the chamber, and the gas inlet is disposed on the part of the inner surface of the chamber that is shielded by the shielding component
Data Source
AI summary
An atomic layer deposition equipment capable of reducing precursor deposition and an atomic layer deposition process method using the same are disclosed. The atomic layer deposition equipment includes a chamber, a stage, a precursor inlet, a shielding component, at least one gas inlet, and at least one pumping port, wherein the stage and the shielding component are disposed in a containing space of the chamber. The shielding component shields part of the inner surface of the chamber, and the gas inlet is fluidly connected to the containing space for introducing an inactive gas to the space between the chamber and the shielding component to prevent the precursor from entering. The pumping port pumps out the precursors that have not reacted with a substrate, thereby reducing the precursors remaining on the inner surface of the chamber, prolonging the cleaning cycle of the chamber and improving the product yield.