Atomic Layer Deposition Device Using High-Concentration Ozone
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Solution Overview
Problem
Conventional atomic layer deposition (ALD) processes face challenges with high film forming temperatures and low efficiency, particularly in forming uniform films on substrates with uneven surfaces, leading to limitations in substrate shape and processing capacity.
Innovation Solution
An atomic layer deposition device and method utilizing a gas supply system with ozone gas of 80 vol % or higher, combined with an inert gas, to oxidize raw material gases at reduced pressures, allowing for efficient film formation at lower temperatures and improved accuracy on diverse substrate shapes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional ALD processes use high temperature heating to enable sufficient reaction of raw material gas and oxidant, then film formation reaction efficiency is improved, but substrate composition stability deteriorates due to compositional deviations in semiconductor thin film layers
Solution Approach 1:
The invention changes the temperature parameter from conventional high temperature (300-500°C) to low temperature (room temperature to 100°C) range, and simultaneously changes the oxidant parameter from molecular oxygen or water vapor to ozone or plasma oxygen, which have higher reactivity and can enable sufficient film formation reactions at lower temperatures without causing compositional deviations in semiconductor thin film layers
Solution Approach 2:
The invention employs ozone or plasma oxygen as strong oxidants that can generate oxygen radicals, which have much higher reactivity compared to conventional oxidants. This accelerated oxidation capability allows the film formation reaction to proceed efficiently at low temperatures, resolving the contradiction between reaction efficiency and substrate stability
2Manufacturing precision
If conventional ALD processes use multi-step sequential processing to form uniform films, then film uniformity is improved, but film formation time increases leading to low productivity
Solution Approach 1:
The invention enables continuous film formation by eliminating the need for lengthy pump-down and backfill cycles between gas supply steps. The use of ozone or plasma oxygen allows the oxidation step to proceed rapidly and continuously, maintaining film uniformity while dramatically reducing total processing time compared to conventional multi-step sequential ALD processes
3Productivity
If conventional ALD processes heat substrates to high temperatures for film formation, then oxidation reaction efficiency is improved, but applicability to low-heat-resistant substrates deteriorates
Solution Approach 1:
The invention fundamentally changes the temperature parameter from high temperature (300-500°C) to low temperature (room temperature to 100°C) range, enabling the use of low-heat-resistant substrates such as plastics and resins that cannot withstand conventional ALD heating conditions, while maintaining oxidation reaction efficiency through the use of highly reactive ozone or plasma oxygen
4Manufacturing precision
If conventional ALD processes use long processing cycles to ensure complete gas removal and film quality, then film quality is improved, but processing efficiency deteriorates
Solution Approach 1:
The invention achieves rapid gas removal and maintains film quality by using plasma oxygen or ozone that can penetrate and react with adsorbed organic layers efficiently. The high reactivity of the oxidant allows for shorter pump-down and reaction times while still achieving complete oxidation and high-quality films, thereby improving processing efficiency without sacrificing film quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-quality oxide films at reduced temperatures, improving film forming efficiency and accuracy, and allowing for processing of substrates with complex shapes without the need for high heat, thus enhancing the versatility of ALD techniques.
Implementation Method 1
supplying an oxidant (e.g. water vapor) for oxidation of the raw material gas. By subsequently supplying the oxidant of the raw material gas into the chamber, the molecular layer of the raw material gas formed on the film formation surface is oxidized so that a thin-film molecular layer of an oxide of the raw material gas
Implementation Method 2
a gas discharge system that discharges any gas inside the chamber by suction to the outside of the chamber and maintains the inside of the chamber in a reduced pressure state
Implementation Method 3
supplying a raw material gas (e.g. TMA (trimethyl aluminum)) for ALD into the chamber. By supplying the raw material gas into the chamber and filling the inside of the chamber with the raw material gas, the raw material gas is adsorbed in an amount of one molecular layer onto a surface (called a film formation surface)
Data Source
AI summary
Provided is an atomic layer deposition device with a gas supply system for supplying respective gases into a chamber in which a target workpiece is removably disposed. The gas supply system includes a raw material gas supply line that supplies a raw material gas into the chamber; an ozone gas supply line that supplies an ozone gas of 80 vol % or higher into the chamber; and an inert gas supply line that supplies an inert gas into the chamber. The ozone gas supply line has an ozone gas buffer part that freely accumulates and seals therein the ozone gas in the ozone gas supply line and freely feeds the accumulated ozone gas into the chamber by opening and closing of an open/close valve mounted on the ozone gas supply line, and an ozone gas buffer part pressure gauge that measures a gas pressure inside the ozone gas buffer part.