Dual Spraying Unit ALD Apparatus for Microparticle Suppression
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Solution Overview
Problem
In the atomic layer deposition (ALD) process, the unintended reaction between a reactant and incompletely adsorbed precursor leads to the formation of microparticles, making it difficult to accurately form a thin film.
Innovation Solution
A thin film deposition apparatus with separate first and second spraying units for precursor and reactant, respectively, which scan across each other, and an inert gas is used to exhaust excess deposition sources, preventing unwanted reactions and microparticle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single spraying unit is used to spray both precursor and reactant, then the device complexity is reduced, but manufacturing precision deteriorates due to unintended reactions and microparticle generation
Solution Approach 1:
The single spraying unit is divided into two separate spraying units: a first spraying unit for spraying the precursor and a second spraying unit for spraying the reactant. This segmentation prevents unintended reactions between unadsorbed precursor and reactant, thereby eliminating microparticle generation and improving thin film formation accuracy.
Solution Approach 2:
The first spraying unit sprays the precursor onto the substrate and completes the adsorption process before the second spraying unit introduces the reactant. This preliminary action ensures that the precursor is fully adsorbed on the substrate surface before the reactant is supplied, preventing premature reactions and microparticle formation.
2Productivity
If the reactant is supplied before complete precursor adsorption, then the deposition time is reduced, but manufacturing precision deteriorates due to microparticle generation
Solution Approach 1:
The system ensures complete precursor adsorption by maintaining the precursor spraying and adsorption process before introducing the reactant. The separate spraying units allow sufficient time for precursor adsorption without compromising deposition efficiency, as the sequential operation optimizes both speed and quality.
Solution Approach 2:
The deposition process is divided into distinct periodic stages: first, the precursor is sprayed and allowed to adsorb completely; second, the reactant is sprayed to react with the adsorbed precursor. This periodic separation of actions ensures complete adsorption before reaction, maintaining thin film uniformity while managing deposition time.
3Manufacturing precision
If separate spraying units are used for precursor and reactant, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The spraying system is segmented into two independent units, each dedicated to a specific function (precursor spraying and reactant spraying). This segmentation improves manufacturing precision by preventing cross-contamination and unintended reactions, while the modular design keeps the increased complexity manageable.
Solution Approach 2:
Both spraying units share common functional elements such as the substrate stage, exhaust system, and control mechanisms. This multi-functionality allows the separate spraying units to operate independently while utilizing shared infrastructure, thereby reducing the overall device complexity increase.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for accurate formation of thin films by ensuring complete adsorption of the precursor before reacting with the reactant, thereby suppressing microparticle generation and improving the deposition process.
Implementation Method 1
a deposition process in which a deposition source vapor is formed, and then the deposition source vapor is attached to the surface of a substrate
Implementation Method 2
a precursor is adsorbed onto the surface of a substrate
Implementation Method 3
due to the reaction between the precursor and the reactant, an atomic layer is formed
Implementation Method 4
a gas spraying unit for spraying an inert gas onto the substrate
Data Source
AI summary
In a thin film deposition apparatus and a thin film deposition method using the same, a first spraying unit and a second spraying unit which are separately driven are prepared, the first spraying unit is driven to sequentially spray a first deposition source and an inert gas onto a substrate, a chamber is exhausted to remove, from the chamber, excess first deposition sources that are not adsorbed onto the substrate from the chamber, a second spraying unit is driven to sequentially spray a second deposition source and an inert gas onto the substrate, and the chamber is exhausted to remove, from the chamber, excess second deposition sources that are not adsorbed onto the substrate. When the thin film deposition method is used, the unintended generation of microparticles during deposition is sufficiently suppressed.