ALD Thin Film Uniformity via EUV Radical Extension
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Solution Overview
Problem
Atomic layer deposition (ALD) processes face challenges in achieving uniform thickness and step coverage due to low yield when using ozone as an oxidant and anisotropic deposition when using oxygen plasma, as ozone requires high injection volumes and oxygen radicals recombine quickly.
Innovation Solution
The method involves forming a precursor layer on a substrate, generating plasma from a reactant gas, and using extreme ultraviolet (EUV) light to extend the effective lifetime of radicals, thereby improving film uniformity and isotropy by radiating EUV light during the plasma generation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ozone is used as the oxidant in ALD process, then the reaction completeness is improved, but the productivity deteriorates due to low yield requiring large injection volumes
Solution Approach 1:
The patent changes the physical state parameter of the oxidant from gaseous ozone to solid peroxide materials (H2O2, NH4OH3, (NH4)2S2O8). This phase change enables higher effective oxygen delivery to the substrate surface, improving both reaction completeness and deposition yield simultaneously by eliminating the need for large gas injection volumes.
2Productivity
If oxygen plasma is used as the oxidant, then the deposition speed is improved, but the film uniformity deteriorates due to radical recombination causing anisotropic deposition
Solution Approach 1:
The patent changes the physical state parameter of the oxidant from plasma phase to solid peroxide materials. This eliminates radical recombination issues inherent in plasma processes while maintaining high reactivity, thereby achieving both fast deposition speed and uniform film thickness without anisotropic deposition.
3Manufacturing precision
If solid peroxide materials are used as oxidant, then the film quality is improved with better uniformity and step coverage, but the process complexity increases due to additional handling requirements
Solution Approach 1:
The patent replaces the need for complex plasma generation equipment and ozone injection systems with simple solid peroxide material deposition. The peroxide materials are delivered via conventional material delivery systems, which decompose thermally or photochemically to release oxygen, thereby simplifying the overall process equipment while achieving superior film quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the thickness uniformity and step coverage of thin films in semiconductor devices by extending the lifetime of reactive radicals and preventing anisotropic deposition, resulting in improved film quality on nanostructured substrates.
Implementation Method 1
radiating extreme ultraviolet (EUV) light into the chamber
Implementation Method 2
generating plasma based on the reactant gas
Data Source
AI summary
Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.