Atomic Layer Deposition Exhaust Valve Angles for Film Quality
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Solution Overview
Problem
Manufacturing semiconductor processes face limitations in achieving high process efficiency and film deposition quality due to physical constraints.
Innovation Solution
A method of depositing an atomic layer using a valve plate rotation mechanism in the exhaust port, with specific angles and gas supply cycles, including precursor adsorption, purge gas removal, and reactor adsorption, optimized for efficient film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional atomic layer deposition methods are used, then the deposition process can be completed, but the process efficiency is limited and cannot meet the demands of high-performance semiconductor manufacturing
Solution Approach 1:
The valve plate is made rotatable to dynamically adjust the exhaust port opening angle during different stages of the deposition cycle. By changing the opening angle from a fixed state to a variable state, the system optimizes gas flow dynamics during precursor supply, purge, and reactor supply phases, thereby improving process efficiency while maintaining film quality
Solution Approach 2:
The opening angle of the exhaust port is changed as a controllable parameter during the deposition process. Different angles are applied at different stages: a first angle during precursor supply, a second angle during purge, and a third angle during reactor supply. This parameter optimization enables better control over gas flow and pressure, improving both productivity and film quality
2Productivity
If the valve plate is rotated to optimize gas flow, then process efficiency improves, but the control complexity increases
Solution Approach 1:
The rotatable valve plate serves multiple functions: it controls the exhaust port opening during precursor supply, adjusts the opening during purge, and modifies the opening during reactor supply. This single multi-functional component replaces what would otherwise require multiple separate valve mechanisms, reducing overall system complexity while improving deposition efficiency
Solution Approach 2:
The exhaust port control function is merged with the valve plate rotation mechanism. By combining the exhaust control and flow regulation functions into a single rotatable component, the system reduces the number of separate control elements needed, thereby improving productivity without proportionally increasing control complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves process efficiency and film deposition quality by controlling gas flow and pressure, resulting in enhanced film thickness and density.
Implementation Method 1
rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber
Implementation Method 2
rotating the valve plate by a first angle while adsorbing a precursor onto a chamber into which a substrate is loaded
Implementation Method 3
rotating the valve plate by a second angle while purging and removing a portion of the precursor which is not adsorbed onto the substrate, based on a purge gas
Data Source
AI summary
A method of depositing an atomic layer is provided. The method includes a plurality of deposition cycles. Each of the plurality of deposition cycles includes rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber into which a substrate is loaded, rotating the valve plate by a second angle while supplying a purge gas to the chamber, rotating the valve plate by a third angle while supplying a reactor to the chamber, and rotating the valve plate by the second angle while supplying the purge gas to the chamber, and wherein the first angle, the second angle, and the third angle are certain angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port, and the first angle differs from the third angle.