ALD Thin Film Quality Improver for Uniform Step Coverage
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Solution Overview
Problem
Current methods for forming thin films on semiconductor substrates face challenges in achieving high step coverage and thickness uniformity, particularly on complex structures, due to side reactions and residual impurities, which affect electrical properties and lead to corrosion.
Innovation Solution
A halogen-substituted branched compound is used as a film quality improver in the ALD process, adsorbed onto the substrate before or after the thin film precursor, to control growth rate and reduce process by-products, improving crystallinity and step coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the deposition temperature is reduced to decrease the growth rate of a thin film, then step coverage is improved, but the residual amount of impurities such as carbon or chlorine in the thin film increases, causing a significant decrease in film quality
Solution Approach 1:
The invention changes the chemical composition parameters of the precursor material by introducing a beta-hydrogen atom in the alkyl group, which enables new decomposition pathways that reduce impurity residues while maintaining low growth rate at reduced deposition temperatures
Solution Approach 2:
The beta-hydrogen atom acts as an intermediary that facilitates hydrogen elimination reactions during film formation, serving as a mediator that enables impurity removal without requiring high deposition temperatures
2Productivity
If process by-products such as chlorides remain in a formed thin film, then the thin film can be formed, but corrosion of metals such as aluminum occurs and film quality is reduced due to generation of non-volatile by-products
Solution Approach 1:
The invention converts the potentially harmful chloride by-products into volatile species that can be easily removed, transforming the harmful corrosion-causing chlorides into beneficial volatile by-products that eliminate corrosion issues
Solution Approach 2:
The beta-hydrogen atom facilitates oxidation reactions that convert residual chloride species into volatile forms, accelerating the removal of harmful by-products from the thin film
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces residual impurities, enhances step coverage and thickness uniformity, and improves the electrical properties of the thin film, preventing corrosion and ensuring high-quality film formation on complex substrates.
Implementation Method 1
adsorbing the film quality improver on a surface of a substrate loaded into the ALD chamber
Data Source
AI summary
The present invention relates to a film quality improver, a method of forming a thin film using the film quality improver, and a semiconductor substrate fabricated using the method. According to the present invention, side reactions may be suppressed by using a film quality improver having a predetermined structure in a thin film deposition process, and process by-products in a thin film may be removed by appropriately controlling a thin film growth rate. As a result, even when the thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the electrical properties of the thin film may be improved due to improvement in the crystallinity of the thin film.