Turntable ALD Apparatus Gas Separation Design
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Solution Overview
Problem
Existing film deposition methods using a turntable-type Atomic Layer Deposition (ALD) apparatus face challenges with gas intermixing and dilution, leading to reduced deposition rates and potential thermal decomposition of precursors, which can result in particle formation and yield reduction.
Innovation Solution
A film deposition apparatus design featuring a turntable with distinct reaction gas nozzles and separation gas nozzles, where the separation gas flows through a defined space to minimize intermixing, using flow regulation plates and convex portions to direct gases and prevent dilution, thereby maintaining high reaction gas concentrations and deposition rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separation gases are supplied to separate first and second reaction gases in a turntable-type ALD apparatus, then gas intermixing is reduced, but the reaction gases are diluted by the separation gases, reducing deposition rate
Solution Approach 1:
The vacuum chamber is divided into multiple independent process areas (first reaction gas supply area, second reaction gas supply area, and separation area) with distinct gas flow paths. Separation gas nozzles are positioned in the separation area to create a gas barrier without directly contacting the reaction gases, achieving segmentated gas control that prevents dilution while maintaining separation effectiveness.
Solution Approach 2:
A separation gas (inert gas) is introduced as an intermediary substance in the separation area between the first and second reaction gas supply areas. This intermediary gas creates a physical barrier that prevents direct mixing of reactive gases while not interfering with the reaction gas adsorption processes on the wafer surface.
2Productivity
If a large amount of reaction gases are supplied to compensate for dilution by separation gases, then deposition rate is maintained, but gas intermixing and by-product formation increase
Solution Approach 1:
By segmenting the vacuum chamber into distinct areas with separate gas supply paths, the system maintains adequate deposition rates using appropriate amounts of reaction gases in each area, eliminating the need to over-supply gases that would lead to intermixing and by-product formation.
Solution Approach 2:
The separation gas acts as a mediator that enables effective gas separation without requiring excessive amounts of reaction gases, thereby preventing the conditions that lead to gas intermixing and harmful by-product deposition.
3Quantity of substance
If reaction gases are confined in a gap area above the turntable, then dilution by separation gases is reduced, but thermal decomposition of precursors occurs, reducing production yield
Solution Approach 1:
The system segments the gas environment into separate areas with controlled gas flows, allowing reaction gases to be supplied at appropriate concentrations without excessive confinement, thereby maintaining temperature control and preventing thermal decomposition.
Solution Approach 2:
The separation gas serves as an intermediary that allows adequate reaction gas concentration in the reaction areas while preventing harmful thermal decomposition by controlling gas distribution and preventing overheating conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the adsorption rate and usage efficiency of reaction gases, increasing process throughput and reducing production costs by minimizing gas intermixing and thermal decomposition, thus improving film deposition quality and yield.
Implementation Method 1
a turntable that is rotatably provided in the chamber and has on a first surface a substrate receiving area in which the substrate is placed
Implementation Method 2
a first reaction gas is adsorbed on a surface of a semiconductor wafer under vacuum and then a second reaction gas is adsorbed on the surface of the wafer in order to form one or more atomic or molecular layers through reaction of the first and the second reaction gases
Implementation Method 3
a space defining member that is provided for at least one of the first reaction gas supplying portion and the second reaction gas supplying portion and defines a first space between the at least one of the first reaction gas supplying portion and the second reaction gas supplying portion and the turntable and a second space so that the separation gas is more likely to flow through the second space rather than the first space
Implementation Method 4
a first reaction gas is adsorbed on a surface of a semiconductor wafer under vacuum
Data Source
AI summary
A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.