ALD Apparatus Inactive Gas Dispersion for Film Uniformity
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Solution Overview
Problem
Existing atomic layer deposition systems face challenges in maintaining process performance due to increased complexity and volume requirements for features like remote plasma integration, spectroscopic ellipsometry, and cluster tool capabilities, leading to issues with film uniformity and cycle times.
Innovation Solution
An atomic layer deposition apparatus with a primary dispersion member having holes that focuses precursor gases concentrically towards the substrate, minimizing contact with chamber surfaces and enhancing precursor delivery and purging efficiency, while also integrating inactive gas barriers to prevent diffusion and contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If advanced features like remote plasma integration, spectroscopic ellipsometry, and cluster tool capabilities are added to ALD systems, then system functionality and process capability are improved, but device complexity and internal volume increase leading to film uniformity issues
Solution Approach 1:
The system is divided into distinct functional modules: a remote plasma generation module, an ALD reaction chamber module, and an ellipsometry monitoring module. Each module operates independently with defined interfaces, allowing advanced features to be integrated without creating uniformity issues in the film deposition process.
Solution Approach 2:
A plasma coupling device acts as an intermediary between the remote plasma source and the ALD reaction chamber, controlling plasma species transport. This intermediary prevents direct plasma contact with the substrate while delivering reactive species, maintaining film uniformity despite the complexity of remote plasma integration.
2Adaptability or versatility
If advanced features like remote plasma integration, spectroscopic ellipsometry, and cluster tool capabilities are added to ALD systems, then system functionality and process capability are improved, but internal volume increases leading to extended purging requirements and longer cycle times
Solution Approach 1:
Different regions of the chamber have optimized gas flow characteristics. The reaction zone near the substrate has enhanced flow patterns that accelerate precursor and byproduct removal, while other regions can accommodate larger volumes for plasma generation and monitoring without proportionally increasing overall purging time.
3Productivity
If precursor gas is introduced into the chamber, then film deposition is achieved, but precursor contact with chamber surfaces causes contamination and non-ideal growth
Solution Approach 1:
An inactive gas curtain acts as an intermediary barrier between the precursor gas and chamber surfaces. This curtain prevents precursor diffusion to surfaces while allowing precursor delivery to the substrate, eliminating contamination without sacrificing deposition productivity.
Solution Approach 2:
An inactive gas environment is maintained in regions where precursor contact would cause contamination. This inert atmosphere prevents unwanted surface reactions and precursor decomposition, ensuring ideal ALD growth conditions while maintaining efficient film deposition.
4Temperature
If plasma species are used for ALD surface reactions, then lower temperature process capability and new reaction pathways are achieved, but plasma generation requires additional system complexity
Solution Approach 1:
The remote plasma generation system uses an intermediary coupling device to transfer plasma species to the reaction chamber without requiring the plasma source to be in direct contact with the substrate. This reduces the temperature and complexity requirements for plasma generation while maintaining the benefits of plasma-enhanced ALD.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus improves film uniformity and reduces cycle times by efficiently focusing precursors and preventing contamination, enabling advanced features like remote plasma and real-time monitoring without generating film defects.
Implementation Method 1
at least a portion of the inactive gas introduced to the internal volume of the chamber through the plurality of holes substantially concentrically focuses the precursor gas towards a surface of the substrate
Implementation Method 2
at least a portion of the inactive gas introduced to the internal volume of the chamber through the plurality of holes substantially concentrically focuses the precursor gas towards a surface of the substrate
Data Source
AI summary
An atomic layer deposition apparatus, including: a chamber with an internal volume; a fixture assembly to hold a substrate within the internal volume of the chamber; a plurality of gas injection ports to facilitate the introduction of gas; at least one precursor gas arrangement to introduce precursor gas into the internal volume; and at least one inactive gas dispersion arrangement to introduce inactive gas into the internal volume. The inactive gas dispersion arrangement is in the form of a primary dispersion member configured to concentrically focus the precursor gas towards a surface of the substrate. A modeling system for an atomic layer deposition apparatus is also disclosed.