Atomic Layer Deposition Injector Head with Confining Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing atomic layer deposition methods are inefficient in using precursor gases, with more than half being wasted due to poor confinement and control, leading to contamination and increased costs.
Innovation Solution
An apparatus with a precursor injector head that confines the precursor gas to the deposition space adjacent to the substrate surface using a confining structure and relative motion, allowing for precise control of pressure and efficient gas distribution, thereby reducing waste and contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If precursor gas is injected into the deposition space without confining structure, then the deposition process can be performed, but more than half of the precursor gas is wasted due to poor confinement and control
Solution Approach 1:
The deposition space is segmented from the rest of the apparatus by introducing a confining structure that creates a distinct, isolated region. This segmentation ensures that precursor gas is contained within the deposition space and directed toward the substrate surface, preventing waste and contamination while maintaining process efficiency.
Solution Approach 2:
A confining structure acts as an intermediary element between the precursor gas supply and the substrate. This structure mediates the gas flow by directing and confining the precursor gas to the deposition space, ensuring efficient utilization and preventing unwanted deposits on apparatus components.
2Object-affected harmful factors
If precursor gas is not confined to the deposition space, then the apparatus structure can be simpler, but contamination occurs on the apparatus and on the backside of the substrate
Solution Approach 1:
The harmful effect of contamination is extracted and isolated by introducing a confining structure that separates the deposition space from the rest of the apparatus. This extraction prevents precursor gas from contacting and contaminating apparatus components and the backside of the substrate, while the structure itself is designed to be removable or maintainable.
Solution Approach 2:
The confining structure, which adds complexity, converts the potential harm of uncontrolled gas spread into a benefit by precisely directing the precursor gas to the substrate surface. This results in improved deposition quality and reduced contamination, making the added complexity worthwhile.
3Productivity
If the deposition space is made larger to accommodate more substrate area, then more substrate can be processed, but precursor gas is wasted and contamination increases
Solution Approach 1:
The confining structure enables dynamic control of precursor gas distribution across the substrate surface. By maintaining a controlled deposition space, the system can efficiently process larger substrate areas while preventing gas waste through precise confinement and direction of the precursor gas flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus significantly reduces precursor gas waste, enhances deposition efficiency, and minimizes contamination, enabling more effective and cost-efficient atomic layer deposition processes.
Implementation Method 1
the apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface
Implementation Method 2
Atomic layer deposition is known as a method for depositing a monolayer of target material. A first one of these process steps comprises application of a precursor gas on the substrate surface. A second one of these process steps comprises reaction of the precursor material in order to form the monolayer of target material
Data Source
AI summary
Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.


