ALD Encapsulation for LED Mirror Diffusion
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Solution Overview
Problem
Optoelectronic semiconductor chips, particularly light-emitting diode chips, face challenges in maintaining long lifetime due to susceptibility of metal mirror layers to diffusion, electromigration, and moisture, which can reduce reflectivity and efficiency.
Innovation Solution
An optoelectronic semiconductor chip is designed with a semiconductor body, a metallic mirror layer for radiation reflection, and an ALD encapsulation layer to protect against moisture and atmospheric gases, ensuring the mirror layer's integrity and radiation transparency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a metallic mirror layer is used for radiation reflection, then reflectivity is improved, but susceptibility to diffusion and electromigration worsens
Solution Approach 1:
A barrier layer is introduced as an intermediary between the metallic mirror layer and the surrounding environment. This barrier layer prevents direct contact between the metal and atmospheric gases, thereby stopping diffusion and electromigration processes while preserving the mirror layer's high reflectivity properties.
Solution Approach 2:
The mirror structure is transformed from a single metallic layer into a composite structure consisting of multiple layers including the metallic mirror layer and protective barrier layers. This composite structure combines the high reflectivity of metal with the protective properties of barrier materials, resolving the contradiction between performance and reliability.
2Illumination intensity
If a metallic mirror layer is used for radiation reflection, then reflectivity is improved, but oxidation in moist environment worsens
Solution Approach 1:
A protective barrier layer serves as an intermediary between the metallic mirror layer and the moist environment. This barrier layer blocks atmospheric gases and moisture from reaching the metal surface, preventing oxidation while allowing the mirror layer to maintain its high reflectivity.
Solution Approach 2:
A thin, sacrificial protective layer is applied over the metallic mirror layer. This layer is designed to provide immediate protection against oxidation and can be easily replaced if needed, while the expensive metallic mirror layer remains protected underneath.
3Reliability
If encapsulation layer is added to protect mirror layer, then reliability is improved, but device complexity worsens
Solution Approach 1:
A thin film encapsulation layer is applied over the metallic mirror layer. This thin protective shell provides comprehensive protection against diffusion, moisture, and oxidation without significantly increasing device complexity or thickness. The thin film approach maintains structural simplicity while delivering reliable protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ALD encapsulation layer provides reliable protection against moisture and maintains high reflectivity, leading to increased efficiency and extended lifespan of the optoelectronic semiconductor chip by preventing material diffusion and absorption of electromagnetic radiation.
Implementation Method 1
an ALD encapsulation layer to protect against moisture and atmospheric gases
Implementation Method 2
a first mirror layer, which is intended for reflection of the electromagnetic radiation
Implementation Method 3
an active region intended for generating electromagnetic radiation... when the semiconductor body is supplied with electricity, the electromagnetic radiation is generated
Data Source
AI summary
An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.


