ALD Reactor Manifold Layout for Reduced Reactant Cross-Contamination
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Solution Overview
Problem
In atomic layer deposition (ALD) processes, existing manifolds face challenges in delivering reactants efficiently due to cross-contamination and dead volumes, which affect the quality of deposition by allowing reactants to penetrate into opposing supply channels, leading to poor deposition quality and non-uniformities on substrates.
Innovation Solution
A semiconductor processing device with a manifold featuring offset supply channels and a capping surface that redirects gas downwardly, reducing penetration between channels and minimizing dead volumes, thereby enhancing the separation of reactants and improving deposition quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If supply channels are positioned close together in existing manifolds, then device complexity is reduced, but cross-contamination occurs between channels causing poor deposition quality
Solution Approach 1:
The patent applies asymmetry by positioning supply channels at offset positions rather than symmetrically, creating an asymmetric flow path configuration that prevents reactant penetration into opposing channels while maintaining a relatively simple manifold structure
Solution Approach 2:
The patent introduces a vertical dimension to the channel arrangement by using offset positions along the longitudinal axis of the bore, transforming the problem from a two-dimensional planar arrangement to a three-dimensional spatial configuration that eliminates cross-contamination
2Manufacturing precision
If supply channels are offset to reduce cross-contamination, then deposition quality improves, but device complexity increases
Solution Approach 1:
The asymmetric offset positioning of supply channels achieves improved deposition quality through enhanced reactant separation, while the overall manifold structure remains relatively simple by maintaining a single bore configuration rather than adding complex multi-channel structures
3Productivity
If capping surface redirects gas downwardly, then reactant delivery efficiency improves, but device complexity increases
Solution Approach 1:
The capping surface uses a curved geometry to redirect gas flow downwardly along the bore, improving reactant delivery efficiency through smooth flow redirection while avoiding sharp edges or complex mechanical components that would increase device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces cross-contamination and improves deposition quality by ensuring efficient delivery of reactants, achieving higher flow rates and uniformity on substrates, thus enhancing the overall performance of ALD processes.
Implementation Method 1
the capping surface is shaped to redirect upwardly directed gas downwardly back through the bore to the outlet
Implementation Method 2
a bore configured to deliver vaporized reactant to a reaction chamber
Implementation Method 3
The substrate is heated to a desired temperature... One reactant is capable of reacting with the adsorbed species of a prior reactant to form a desired product on the substrate surface
Implementation Method 4
a first reactant representing a precursor material is adsorbed largely intact in a self-limiting process on a wafer
Implementation Method 5
The substrate is heated to a desired temperature, typically above the condensation temperatures of the selected vapor phase reactants and below their thermal decomposition temperatures
Data Source
AI summary
The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.