ALD Mask Assembly Cooling Path for Deformation Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Atomic layer deposition methods face challenges in uniformly forming atomic layers on substrates due to deformation of mask assemblies caused by heat and chemical reactions within the deposition chamber, which affects the efficiency and uniformity of the process.
Innovation Solution
An atomic layer deposition apparatus with a mask assembly featuring a cooling path to dissipate heat and a substrate holder with a heater, allowing for controlled temperature and pressure conditions to prevent mask assembly deformation and chemical reactions, ensuring uniform gas diffusion and deposition on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a mask assembly is used to improve uniformity of atomic layer deposition, then deposition uniformity is improved, but the mask assembly deforms due to heat in the chamber
Solution Approach 1:
The mask assembly is divided into a mask body and a separate mask holder. The mask holder is made of heat-resistant material and positioned away from the substrate heating region, while the mask body contains the pattern holes. This segmentation allows the mask holder to withstand chamber heat without deforming, while the mask body maintains its precision for uniform deposition.
Solution Approach 2:
The mask holder acts as an intermediary between the heat source (substrate holder) and the mask assembly. It provides a thermally stable mounting structure that isolates the mask body from direct heat exposure, preventing thermal deformation while maintaining the mask's functional integrity.
2Productivity
If reaction gas is supplied into the chamber for atomic layer deposition, then atomic layer formation is enabled, but chemical reaction occurs at the surface of the mask assembly
Solution Approach 1:
The mask holder serves as a physical barrier and thermal intermediary that prevents direct contact between reaction gas and the mask assembly surface. By positioning the mask holder away from the substrate and using it to support the mask body, it blocks reaction gas from reaching the mask material, preventing unwanted chemical reactions while allowing deposition to proceed on the substrate.
Solution Approach 2:
The mask assembly is extracted from the direct reaction zone by mounting it on the mask holder positioned away from the substrate. This separation removes the mask assembly from the environment where chemical reactions occur, eliminating the harmful effect while preserving the mask's function in directing reaction gas flow.
3Productivity
If the chamber temperature is increased for atomic layer deposition, then deposition rate is improved, but substrate deformation occurs
Solution Approach 1:
Heating is applied locally only to the substrate holder and substrate area, while the mask holder and mask assembly remain in cooler regions. This localized heating allows the deposition process to proceed at elevated temperatures for improved rate, while preventing thermal deformation of the substrate by controlling heat distribution to specific zones only.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the uniform formation of atomic layers on substrates by preventing mask assembly deformation and chemical reactions, allowing for precise control of the deposition process and achieving high uniformity and efficiency in the atomic layer deposition.
Implementation Method 1
a substrate holder (110) disposed between the vacuum pump (130) and the gas supply unit (140) and having a heater (115) installed therein
Implementation Method 2
a mask assembly (120) disposed between the substrate holder (110) and the gas supply unit (140) and having a cooling path (124) formed in an edge thereof to move coolant
Implementation Method 3
a vacuum pump (130) configured to control a pressure in the chamber (100)
Implementation Method 4
an atomic layer deposition (ALD) process of forming an atomic layer of a metal catalyst on a substrate through a chemical method using a reaction gas including the metal catalyst
Data Source
AI summary
An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.