Ultrathin Ceramic Membranes Released by ALD and Sacrificial Polymer

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Solution Overview

Problem

Existing methods for fabricating ultrathin membranes are limited by material selectivity and scalability, particularly for two-dimensional materials like graphene and hexagonal boron nitride, leading to issues such as folds, wrinkles, and adhesion problems, which restrict their use in applications requiring customizable properties.

Innovation Solution

A fabrication process using atomic layer deposition (ALD) with a sacrificial polymer layer and selective plasma etching allows for the release of ultrathin films from a variety of materials, including titanium nitride, without damage, by leveraging high chemical selectivity between ALD-grown transition metal nitrides and oxides and the sacrificial polymer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If manual transfer methods are used for two-dimensional materials, then the materials can be isolated and positioned, but folds, wrinkles, and adhesion issues occur that limit usable area and reproducibility

Engineering Contradiction:
Improvemembrane flatness and adhesion qualityVSAvoidmaterial selection flexibility
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

A sacrificial polymer layer is introduced as an intermediary between the two-dimensional material and the final support structure. The polymer is deposited conformally on the membrane, providing mechanical support during handling and transfer. After transfer, the sacrificial polymer is selectively removed via plasma etching, releasing the membrane without contact-induced damage. This intermediary approach eliminates folds and wrinkles while maintaining material versatility.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The support structure is segmented into multiple functional layers: a permanent support layer for mechanical strength, a sacrificial polymer layer for transfer assistance, and the ultrathin membrane layer for the final application. This segmentation allows each layer to perform its specific function optimally, with the sacrificial layer being removed after serving its purpose, thus achieving high manufacturing precision without limiting material choices.

Inventive Principle:
Principle #1Segmentation

2Reliability

If high selectivity etching is used to release ultrathin membranes, then membrane damage is minimized, but the number of compatible material combinations is limited

Engineering Contradiction:
Improvemembrane integrity during releaseVSAvoidmaterial combination options
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The sacrificial polymer layer acts as a mediator between the membrane material and the etching process. The polymer is designed to be highly selective to plasma etching while the membrane materials (including diverse two-dimensional materials) are resistant to the same etching conditions. This allows high selectivity etching to remove the polymer without damaging the membrane, enabling broad material versatility while maintaining membrane integrity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The etching process parameters are optimized to exploit the differential resistance between the sacrificial polymer and various membrane materials. By controlling plasma power, gas composition, and etch duration, the process achieves high selectivity for polymer removal while leaving diverse membrane materials (graphene, hBN, MoS2, TiN, etc.) intact. This parameter optimization expands material compatibility while preserving membrane reliability.

Inventive Principle:
Principle #35Parameter changes

3Productivity

If standard microfabrication techniques are used for ultrathin membranes, then scalable production is enabled, but material selection is restricted by etch process compatibility

Engineering Contradiction:
Improvescalable production capabilityVSAvoidmembrane material variety
Core Design Contradiction:
ProductivityVSAdaptability or versatility

Solution Approach 1:

The sacrificial polymer layer creates a universal platform that is compatible with diverse membrane materials through a single standardized release process. The polymer's selective removal via plasma etching works across different membrane materials (two-dimensional materials, transition metal nitrides, oxides, etc.), eliminating the need for material-specific release processes. This universality enables scalable production while accommodating broad material variety.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The plasma etching parameters are tuned to achieve universal selectivity across multiple membrane material types. By optimizing the etch chemistry and conditions, the process reliably removes the sacrificial polymer while leaving various materials (graphene, hBN, MoS2, TiN, Al2O3, etc.) unaffected. This parameter optimization enables a single scalable process to produce diverse membrane materials without compromising material versatility.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the production of ultrathin, conductive, and electron-transparent membranes with customizable properties, suitable for electron microscopy and microelectromechanical system applications, with improved signal-to-noise ratio and reduced damage during the release process.

Implementation Method 1

the materials are grown by atomic layer deposition

Methodology Applied
Scientific EffectAtomic layer deposition: Chemical Vapour Deposition

Implementation Method 2

after plasma etching, will form the membrane

Methodology Applied
Scientific EffectPlasma etching: Plasma

Data Source

PatentUS12515945B2Thin films and methods of fabrication thereof
Publication Date: 2026.01.06 RGT UNIV OF CALIFORNIA
  • US12515945B2 patent drawing
  • US12515945B2 patent drawing
  • US12515945B2 patent drawing

AI summary

This disclosure provides methods and apparatus related to thin films. In one aspect, a silicon wafer with a first silicon nitride layer disposed on a first side of the silicon wafer and a second silicon nitride layer disposed on a second side of the silicon wafer is provided. A first side of the first silicon nitride layer is disposed on the first side of the silicon wafer. The second silicon nitride layer is patterned. The silicon wafer is etched to expose the first side of the first silicon nitride layer. A polymer is deposited on a second side of the first silicon nitride layer. A first ceramic layer is deposited on the polymer disposed on the second side of the first silicon nitride layer using an atomic layer deposition process. The first silicon nitride layer and the polymer are etched to expose a first side of the first ceramic layer.