ALD Inner Tube and Nozzle Layout for Uniform Step Coverage

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The challenge in semiconductor manufacturing is forming a thin film with sufficient step coverage on substrates due to reduced line widths and film thickness, exacerbated by difficulties in supplying and discharging process gases effectively during atomic layer deposition.

Innovation Solution

A semiconductor manufacturing apparatus with a process chamber design that includes a boat, inner tube, and nozzle system, featuring asymmetrical gas injection ports and slits with varying dimensions and angles to optimize gas flow and distribution, enhancing the supply efficiency of process gases onto substrates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional symmetrical gas injection ports and slits are used, then the structure is simple and easy to manufacture, but the process gas is not sufficiently supplied to and discharged from the atomic layer deposition, reducing supply efficiency

Engineering Contradiction:
Improvesupply efficiency of process gasVSAvoidstructure complexity of gas injection port and slit
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The gas injection port is designed with asymmetrical dimensions where the width in the first direction differs from the width in the second direction. Similarly, the slit has asymmetrical dimensions with different widths in the first and second directions. This asymmetry optimizes the gas flow path and distribution, enabling sufficient supply and discharge of process gas during atomic layer deposition, thereby improving supply efficiency without excessive structural complexity.

Inventive Principle:
Principle #4Asymmetry

2Productivity

If the line width of pattern is reduced to increase integration, then the area occupied by unit cell is reduced, but it becomes very difficult to form the substrate to have a sufficient step coverage

Engineering Contradiction:
Improveintegration level of semiconductor deviceVSAvoidstep coverage on substrate
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The asymmetrical gas injection port and slit design creates non-uniform gas flow distribution that is optimized for local conditions. The different widths in the first and second directions allow for tailored gas delivery to different regions of the substrate, ensuring sufficient step coverage even when line widths are reduced to increase integration level.

Inventive Principle:
Principle #3Local quality

3Productivity

If conventional gas injection ports with equal widths are used, then the manufacturing is simple, but the dispersion and supply efficiency of process gas is insufficient

Engineering Contradiction:
Improvesupply efficiency and dispersion of process gasVSAvoidmanufacturing simplicity of gas injection port
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The gas injection port features asymmetrical dimensions with different widths in the first and second directions. This design optimizes gas dispersion and supply efficiency by creating more effective gas flow patterns, while still maintaining manufacturability through straightforward dimensional specifications.

Inventive Principle:
Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus improves the supply efficiency and dispersion of process gases, increasing the amount of gas reaching the substrate and maintaining uniform film deposition, thereby addressing the challenge of step coverage.

Implementation Method 1

The gas injection port includes a first inlet and a first outlet... through which the process gas is directed towards the slit

Methodology Applied
Scientific EffectFluid flow:

Implementation Method 2

The apparatus improves the supply efficiency and dispersion of process gases, increasing the amount of gas reaching the substrate

Methodology Applied
Scientific EffectGas dispersion: Dispersion (of waves)

Implementation Method 3

The atomic layer deposition injects a source gas and a reactive gas onto a substrate to grow the thin film

Methodology Applied
Scientific EffectAtomic layer deposition: Deposition (physical)

Data Source

PatentUS12546004B2Semiconductor manufacturing apparatus
Publication Date: 2026.02.10 SAMSUNG ELECTRONICS CO LTD
  • US12546004B2 patent drawing
  • US12546004B2 patent drawing
  • US12546004B2 patent drawing

AI summary

A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.