Atomic Layer Deposition with Oxygen Precursors to Avoid Interfacial Layers
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Solution Overview
Problem
Conventional atomic layer deposition technologies struggle to deposit oxygen-containing films without forming interfacial layers, which are undesirable as device sizes shrink, and existing oxygen precursors like water, steam, ozone, molecular oxygen, or hydrogen peroxide oxidize substrates, limiting the ability to produce thin films for modern applications.
Innovation Solution
The use of novel oxygen-containing precursors such as alcohols, alkoxides, hydroxides, and other compounds during atomic layer deposition to form metal oxide materials without interfacial layers, allowing for multiple metals and fine-tuning of material properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional oxygen precursors (water, steam, ozone, molecular oxygen, hydrogen peroxide) are used during atomic layer deposition, then oxygen-containing films can be deposited, but interfacial layers are formed on the substrate
Solution Approach 1:
The patent changes the chemical parameters of the oxygen precursor from conventional options (water, steam, ozone, molecular oxygen, hydrogen peroxide) to novel compounds with different reactivity profiles. This parameter change allows oxygen incorporation without the substrate oxidation that causes interfacial layer formation, thereby resolving the contradiction between depositing oxygen-containing films and avoiding harmful interfacial layers.
2Quantity of substance
If conventional oxygen precursors are used, then oxygen-containing films can be formed, but substrate oxidation occurs which limits thin film production
Solution Approach 1:
The patent modifies the chemical composition and reactivity parameters of the oxygen precursor to achieve selective oxygen transfer to the metal precursor without oxidizing the substrate. This parameter change enables the formation of oxygen-containing metal oxide films while preventing substrate oxidation, thus allowing production of thinner films for modern semiconductor applications.
3Productivity
If device sizes are reduced, then device density increases, but interfacial layers become more problematic and removal selectivity becomes harder to maintain
Solution Approach 1:
By changing the chemical parameters of the oxygen precursor to novel compounds, the patent eliminates interfacial layer formation that would otherwise interfere with scaled-down device structures. This enables continued device miniaturization and increased device density without the compounding problems of interfacial layer management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-quality metal oxide materials with desirable electrical properties, such as high dielectric constants and low leakage currents, without interfacial layers, suitable for advanced semiconductor processing.
Implementation Method 1
contacting the substrate with the first precursor. The contacting may form a first portion of a metal oxide material on the substrate
Implementation Method 2
contacting the first portion of a metal oxide material with the second precursor. The contacting may form a metal oxide material on the substrate
Data Source
AI summary
Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The first precursor may include a first metal. The methods may include contacting the substrate with the first precursor. The contacting may form a first portion of a metal oxide material on the substrate. The methods may include providing a second precursor to the semiconductor processing chamber. The second precursor may be an oxygen-containing precursor including an alcohol, an alkoxide, a hydroxide, an acetylacetonate, an acetate, a formate, a nitrate, a sulfate, a phosphate, a phosphide, a carbonate, an oxide, an oxynitride, a perchlorate, an oxyhalide, a peroxide, an oxalate, or a phenolate. The methods may include contacting the first portion of the metal oxide material with the second precursor. The contacting may form a metal oxide material.