ALD Precursor Compound for Ultra-Thin Etch-Selective Lower Layers
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Solution Overview
Problem
Existing lithography processes in semiconductor manufacturing result in poor pattern shape due to etching of the photoresist layer, leading to degraded device performance, and require excessive exposure time and etching duration.
Innovation Solution
A precursor compound for forming a thin film using atomic layer deposition (ALD) to create a ultra-thin lower layer with etch selectivity similar to the photoresist, minimizing the thickness of the lower layer to prevent pattern collapse and reduce exposure time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional lower layer with standard thickness is used, then etch selectivity is achieved, but the photoresist layer is etched along with the lower layer causing poor pattern shape
Solution Approach 1:
The patent applies this principle by forming an ultra-thin lower layer (1-10 nm thickness) that provides etch selectivity without the harmful side effect of photoresist etching. The thin film approach allows the lower layer to be selectively etched while minimizing exposure and etching time, thereby preventing damage to the photoresist layer.
Solution Approach 2:
The patent changes the thickness parameter of the lower layer from conventional dimensions to ultra-thin dimensions (1-10 nm). This parameter change reduces the etching time required, which in turn prevents excessive etching of the photoresist layer while maintaining sufficient etch selectivity for pattern formation.
2Reliability
If a thicker lower layer is used to ensure etch selectivity, then pattern formation is enabled, but exposure time and etching duration increase excessively
Solution Approach 1:
The ultra-thin lower layer (1-10 nm) formed by atomic layer deposition provides sufficient etch selectivity despite its minimal thickness. This thin film structure enables pattern formation with reduced exposure time because less material needs to be penetrated by the exposure light, thereby reducing the loss of time.
Solution Approach 2:
The patent changes the thickness parameter of the lower layer to ultra-thin dimensions (1-10 nm), which reduces both exposure time and etching duration while maintaining etch selectivity. The reduced thickness allows faster processing without sacrificing the ability to form patterns reliably.
3Reliability
If a thicker lower layer is used to ensure etch selectivity, then pattern formation is enabled, but etching duration increases excessively
Solution Approach 1:
The ultra-thin lower layer (1-10 nm) provides etch selectivity with minimal thickness, enabling the etching process to complete much faster. The thin film structure reduces the distance the etchant must travel, thereby significantly reducing etching duration while maintaining sufficient selectivity for reliable pattern formation.
Solution Approach 2:
The patent changes the thickness parameter of the lower layer to ultra-thin dimensions (1-10 nm), which directly reduces etching duration. The reduced thickness means less material to remove, allowing the etching process to complete quickly while maintaining etch selectivity through the specific material composition and thickness control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces exposure time and prevents pattern collapse by forming a strong bond between the photoresist layer and substrate, allowing for reduced EUV dosage and etching time, thereby improving pattern quality and reducing costs.
Implementation Method 1
forming a lower layer by depositing the precursor including the material of Chemical Formula 1 on a substrate by atomic layer deposition (ALD) method
Data Source
AI summary
The present techniques provide a precursor compound of chemical formula 1 for thin film formation and a preparation method therefor, wherein a photoresist layer can be prevented from undergoing pattern collapse by reducing the exposure time for pattern formation and minimizing the thickness of a lower layer with an etching selectivity similar to that of a photoresist or omitting the lower layer during post-exposure etching. In chemical formula 1, R0 is Si, Sn, Ge, Sb, In, Hf, Zr, Ti, or Te; R1 is CH3, CF3, CH═CH2, halogen, or phenyl; R2 and R2′ each are each independently alkyl or alkoxy; R3 is amine or halogen; R is hydrogen or halogen; n is an integer of 1-7.