ALD Process Kit With Gas Channels For Vacuum Maintenance
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Solution Overview
Problem
The existing atomic layer deposition (ALD) systems face challenges in maintaining the integrity of the processing chamber, as extraneous deposits accumulate and require offline cleaning, leading to excessive downtime due to the need to break vacuum for chamber maintenance.
Innovation Solution
The proposed solution involves a processing system with a process kit that includes a dielectric window, sealing frame, and mask frame with gas inlet and outlet channels, allowing for in situ cleaning and maintenance without breaking vacuum, enabling the transfer of substrates and masks between chambers while maintaining a sealed environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If chamber surfaces are removed for offline cleaning, then deposits are removed from chamber surfaces, but chamber downtime increases due to breaking vacuum
Solution Approach 1:
The chamber is equipped with an integrated cleaning system that allows chamber surfaces to clean themselves without external intervention. The cleaning gas delivery system injects cleaning gases directly onto the chamber surfaces through gas distribution channels, enabling self-cleaning while maintaining vacuum conditions and avoiding chamber downtime.
Solution Approach 2:
The invention uses gas flow through channels to deliver cleaning agents to chamber surfaces. Gas distribution channels deliver cleaning gases (such as oxygen or plasma) across the chamber surfaces, using pneumatic principles to remove deposits without mechanical contact or vacuum breaking.
2Productivity
If chamber surfaces are not cleaned periodically, then chamber downtime is reduced, but deposits flake and peel off leading to particulates on substrate
Solution Approach 1:
The cleaning system operates continuously or periodically without interrupting the overall production process. Chamber surfaces are cleaned in-situ between deposition cycles, maintaining continuous productivity while preventing particulate contamination through ongoing removal of accumulating deposits.
Solution Approach 2:
The system converts the harmful accumulation of deposits into a beneficial cleaning process by using controlled gas flow to remove deposits before they become problematic. The cleaning gas transforms the potential harm of deposit accumulation into an opportunity for maintenance without production interruption.
3Adaptability or versatility
If masks and substrates are transferred between chambers, then processing flexibility is improved, but vacuum integrity is compromised
Solution Approach 1:
A transfer chamber serves as an intermediary space between processing chambers. Masks and substrates are transferred through this intermediate chamber that maintains vacuum conditions, allowing flexibility in moving components between chambers without compromising the vacuum integrity of the main processing chambers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes downtime by allowing for the cleaning and replacement of chamber components without breaking the vacuum, ensuring continuous operation and maintaining the integrity of the ALD process, thereby enhancing the reliability of the moisture barrier for encapsulating OLEDs.
Implementation Method 1
flowing process gases through the inlet channel into a volume and pumping excess gases out of the process kit through the outlet channel
Implementation Method 2
ALD is based upon atomic layer epitaxy (ALE) and employs chemisorption techniques to deliver precursor molecules on a substrate surface in sequential cycles
Implementation Method 3
ALD is based upon atomic layer epitaxy (ALE) and employs chemisorption techniques to deliver precursor molecules on a substrate surface
Data Source
AI summary
The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.


