Reactor Lid Baffle for Uniform Plasma Distribution in ALD
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Solution Overview
Problem
Conventional Atomic Layer Deposition (ALD) equipment faces challenges in achieving uniform wafer film deposition due to complex structures, making it difficult to analyze and meet conditions such as plasma power and high temperature, which affects semiconductor yield.
Innovation Solution
A reactor lid with a remote plasma unit and a truncated circular cone-shaped top portion, a sidewall portion with varying hole distances and diameters, and a baffle to disperse plasma and gas evenly across the wafer, creating a more efficient wafer processing space.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional showerhead structure is used in ALD equipment, then the equipment can perform deposition processes, but the structure becomes complex and difficult to analyze process results
Solution Approach 1:
The patent extracts and removes the complex showerhead structure from the ALD equipment, replacing it with a simplified reactor lid design. The reactor lid includes a gas inlet, a top portion with opening, and a baffle structure, eliminating the need for the conventional showerhead while maintaining deposition functionality. This extraction of the problematic component directly reduces device complexity and improves ease of analysis.
2Productivity
If plasma and gas are inserted directly into the wafer processing space, then the deposition process can proceed, but the plasma and gas concentrate in the center of the wafer causing non-uniform film deposition
Solution Approach 1:
The patent introduces a baffle as an intermediary component between the gas inlet and the wafer processing space. The baffle includes a specific structure with opening that acts as a mediator to redirect and distribute the plasma and gas flow. This intermediary structure prevents direct concentration of plasma and gas at the wafer center, ensuring uniform distribution across the wafer surface while maintaining deposition efficiency.
Solution Approach 2:
The reactor lid design implements local quality by creating different flow characteristics in different regions of the processing space. The baffle structure with its specific opening configuration creates targeted flow patterns that ensure uniform plasma and gas distribution across the wafer surface, addressing the local uniformity issue at the wafer level while maintaining overall process efficiency.
3Adaptability or versatility
If multiple components like showerhead, gas channel, inlet port, and insulation parts are included, then the equipment can meet various processing conditions, but it becomes difficult to meet all conditions simultaneously
Solution Approach 1:
The reactor lid is designed as a multi-functional universal component that integrates the functions of the gas inlet, top portion with opening, baffle structure, and sidewall portion. This single integrated structure performs multiple functions: gas introduction, flow distribution, plasma generation support, and process condition control. By consolidating multiple components into one universal reactor lid design, the system achieves both versatility in meeting various processing conditions and reliability in controlling those conditions simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves wafer uniformity by ensuring even distribution of plasma and gas, enhancing semiconductor yield and processing efficiency.
Implementation Method 1
a remote plasma unit configured to generate plasma
Implementation Method 2
a remote plasma unit configured to generate plasma
Implementation Method 3
a wafer support provided with a heater for supporting and heating a wafer
Implementation Method 4
a baffle placed at the mouth of the top portion below the gas inlet and configured to prevent the generated plasma and the processing gas from concentrating in the center of the wafer
Implementation Method 5
a top portion disposed below the gas inlet and having a truncated circular cone shape, the top portion being configured for the generated plasma and the processing gas to be inserted into the wafer processing space
Data Source
AI summary
A reaction lid and a Plasma Enhanced Atomic Layer Deposition (PEALD) apparatus with Remote Plasma Unit (RPU) using the reaction lid is disclosed. The reaction lid may comprise a gas inlet configured to flow a generated plasma and a processing gas into a wafer processing space, a top portion disposed below the gas inlet and having a truncated circular cone shape, the top portion defining the wafer processing space for flowing the generated plasma and the processing gas, a sidewall portion disposed below the top portion and a baffle placed at the mouth of the top portion below the gas inlet and configured to disperse the generated plasma and the processing gas throughout a surface of the wafer evenly by preventing the generated plasma and the processing gas from concentrating in the center of the wafer, wherein the wafer processing space is also defined by the sidewall portion.