ALD Reactor Chamber Layout for Uniform Precursor Coverage
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Solution Overview
Problem
Existing atomic layer deposition (ALD) processes face challenges with non-uniform deposition films due to incomplete precursor source coverage, leading to poor film quality, low efficiency, and waste of precursor sources.
Innovation Solution
An ALD processing apparatus with a reactor design featuring opposite gas inlet and outlet channels, a lifting device for sealing the reaction chamber, and a grabbing device for substrate handling, ensuring uniform precursor distribution and efficient film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a large amount of precursor source is introduced into the reactor in pulse, then the precursor source can cover more substrate area, but the precursor source cannot fully cover the whole substrate uniformly, leading to non-uniform contact and poor deposition film uniformity
Solution Approach 1:
The gas inlet channel is divided into multiple separate inlet channels distributed across the bottom of the reaction chamber. This segmentation allows precursor source to be introduced from multiple locations simultaneously, achieving uniform coverage across the entire substrate surface rather than concentrating flow in a single location.
Solution Approach 2:
Multiple gas inlet channels are strategically positioned at different locations on the substrate surface, providing locally optimized precursor delivery. Each inlet channel addresses the specific needs of its local region, ensuring uniform precursor distribution and contact across the entire substrate area.
2Area of stationary object
If a large amount of precursor source is introduced into the reactor, then the precursor source can cover more substrate area, but incomplete reaction occurs and a large amount of precursor source remains, leading to low film-forming efficiency and waste of precursor source
Solution Approach 1:
The gas inlet channel is divided into multiple separate inlet channels distributed across the bottom of the reaction chamber. This segmentation allows precursor source to be introduced from multiple locations simultaneously, achieving uniform coverage across the entire substrate surface rather than concentrating flow in a single location.
Solution Approach 2:
The ALD process alternates between precursor introduction and purging phases, ensuring continuous useful action. During the precursor phase, multiple inlet channels deliver precursor uniformly; during the purging phase, excess precursor is completely removed. This continuous alternation prevents precursor waste while maintaining high film-forming efficiency.
3Reliability
If the reaction chamber is sealed with a lifting device and vacuumized, then the precursor source can be effectively introduced and reacted, but the cycle time increases due to sealing and vacuumization steps
Solution Approach 1:
The reaction chamber serves multiple functions: it acts as both the vacuum chamber for precursor introduction and the reaction environment for ALD processing. The lifting device provides sealing capability that enables the chamber to function as a controlled reaction environment, combining what would traditionally require separate chambers into a single multi-functional unit.
4Manufacturing precision
If gas inlet and outlet channels are arranged opposite to each other, then uniform precursor distribution is achieved, but the device complexity increases due to additional channel arrangements
Solution Approach 1:
The gas inlet channel is divided into multiple separate inlet channels distributed across the bottom of the reaction chamber. This segmentation allows precursor source to be introduced from multiple locations simultaneously, achieving uniform coverage across the entire substrate surface rather than concentrating flow in a single location.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus ensures comprehensive precursor source coverage, improving film uniformity, reducing cycle time, and enhancing precursor utilization, suitable for batch production.
Implementation Method 1
the sealing cover operably seals the top of the reaction chamber
Implementation Method 2
vacuumizing the vacuum chamber
Implementation Method 3
alternately introducing a gas-phase precursor source into the reactor, so as to perform chemisorption and reaction on the substrate to form a deposition film
Data Source
AI summary
Provided are an ALD processing apparatus and a processing method. A reactor of the processing apparatus includes a vacuum chamber and a reaction chamber, the reaction chamber is built in the vacuum chamber and is open at a top, a bottom of the reaction chamber is formed with a gas inlet channel and a gas outlet channel arranged opposite to each other with respect to centerline of the bottom of the reaction chamber in a first direction, a lifting device is provided on the reactor, an output end of the lifting device stretches and contracts vertically and is provided with a sealing cover, which operably seals the top of the reaction chamber, a transporting device is configured to transport a substrate into the vacuum chamber, a grabbing device is provided on the sealing cover, and the grabbing device is configured to grab the substrate transported into the vacuum chamber.