Atomic Layer Deposition Apparatus with Segmented Gas Dividers
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Solution Overview
Problem
Atomic layer deposition apparatuses are typically large and time-consuming due to the circular arrangement of reaction chambers or the need for substrates to pass through multiple chambers, and they often suffer from residual source and reaction gases that can hinder efficient thin film formation.
Innovation Solution
The apparatus features a substrate support with a first divider and a second divider, including through-holes and modules that allow for simultaneous spraying of source, reaction, and purge gases to specific areas of the substrate, reducing the size and lamination time of the apparatus while preventing gas residuals through strategic gas supply and purge cycles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple reaction chambers are circularly arranged or substrates pass through multiple chambers, then thin film formation can be achieved, but the apparatus size and lamination time increase
Solution Approach 1:
The apparatus divides the substrate surface into multiple predetermined areas and uses separate division modules to spray gases to each area simultaneously. This segmentation allows parallel processing of different substrate regions, reducing overall lamination time while maintaining film quality.
Solution Approach 2:
The invention transitions from sequential spatial processing (substrate moving through chambers) to simultaneous spatial processing (multiple areas treated at once). By utilizing the two-dimensional substrate surface for parallel gas spraying operations, the system reduces the time dimension without compromising film formation quality.
2Productivity
If source gas and reaction gas are sprayed for thin film formation, then deposition efficiency is improved, but residual gases remain in the apparatus
Solution Approach 1:
The system performs preliminary purging by supplying purge gas through the same division modules before or during the gas spraying process. This preliminary action removes residual source and reaction gases from the apparatus, preventing contamination while maintaining deposition efficiency.
Solution Approach 2:
Purge gas acts as an intermediary substance that mediates between the source/reaction gases and the environment. The purge gas flows through the division modules and predetermined areas, carrying away residual harmful gases while allowing the deposition process to proceed efficiently.
3Manufacturing precision
If sequential ejection of source gas and reaction gas is used, then uniform thin film can be formed, but the process time increases
Solution Approach 1:
The substrate surface is segmented into multiple predetermined areas, each receiving controlled gas spraying from dedicated division modules. This spatial segmentation allows simultaneous sequential gas ejection to different areas, maintaining film uniformity through controlled distribution while reducing overall process time through parallel operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables faster thin film formation on substrates by targeting multiple areas simultaneously and effectively purging residual gases, thereby reducing the overall size and operation time of the apparatus while ensuring uniform deposition.
Implementation Method 1
a first divider on the substrate support and including a plurality of first division modules configured to selectively spray a source gas, a reaction gas and a purge gas to predetermined areas of the substrate
Implementation Method 2
A first through-hole and a second through-hole are defined in each of the plurality of second division modules, and a gas passed through the first and second through-holes of the second division modules moves to the first division modules
Implementation Method 3
The atomic layer deposition apparatus may further include a sealing portion between the substrate support and the first divider and surrounding the substrate
Implementation Method 4
spraying the source gas to each of the predetermined areas of the substrate through the first divider; first spraying the purge gas to the predetermined areas through the first divider, after the spraying the source gas; spraying the reaction gas to the predetermined areas through the first divider, after the first spraying the purge gas; and second spraying the purge gas to the predetermined areas through the first divider, after the spraying the reaction gas
Data Source
AI summary
An atomic layer deposition apparatus includes: a substrate support supporting a substrate; a first divider including a plurality of first division modules provided on the substrate support and selectively spraying a source gas, a reaction gas, and a purge gas to each of predetermined areas; and a second divider including a plurality of second division modules provided on the first divider and supplying the gases to the respective first division modules, wherein each of the plurality of second division modules is formed of a first through-hole and a second through-hole, and the gas passed through the first and second through-holes moves to the first division modules.