ALD Showerhead Plate Structure for Shorter Purge and Uniform Flow
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Solution Overview
Problem
Existing vapor-phase reactors face challenges with prolonged purge times and reduced throughput due to large plenums in showerhead assemblies, leading to increased costs and non-uniform deposition due to high impingement forces.
Innovation Solution
The development of a showerhead plate with a reduced thickness and increased number of apertures, along with tapered sections to facilitate uniform gas flow and minimize plenum size, allowing for customizable reaction chamber dimensions and improved throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a traditional showerhead assembly with large plenum is used, then the vapor distribution system can accommodate standard design requirements, but the purge time is prolonged and throughput is reduced
Solution Approach 1:
The patent extracts and eliminates the large plenum chamber from the showerhead assembly by using a thin showerhead plate with apertures that extend through from the upstream to downstream surfaces. This removal of the plenum volume directly reduces the time required to purge the reaction chamber, thereby increasing throughput without compromising vapor distribution functionality
Solution Approach 2:
The patent changes the critical parameter of showerhead plate thickness from traditional large dimensions to a thin profile (e.g., 0.5 mm to 2 mm). This parameter change dramatically reduces the plenum volume and purge time while the aperture design compensates to maintain effective vapor delivery to the substrate
2Manufacturing precision
If a traditional showerhead assembly with large plenum is used, then the vapor distribution system can maintain structural integrity, but the deposition uniformity is compromised due to high impingement forces
Solution Approach 1:
The patent applies local quality by creating multiple discrete aperture locations across the showerhead plate surface. Each aperture serves as a localized vapor delivery point, distributing the vapor flow more evenly across the substrate area. This localized distribution approach reduces high-velocity impingement forces at any single point while maintaining overall deposition uniformity
Solution Approach 2:
The patent segments the vapor delivery function into multiple separate apertures rather than using a single large opening or continuous slot. This segmentation of the flow paths reduces the velocity and impingement force of individual vapor streams while collectively providing uniform coverage across the substrate, improving deposition uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces purge times, enhances throughput, and ensures uniform deposition by distributing reactants more evenly across the substrate, thereby reducing costs and improving processing efficiency.
Implementation Method 1
vapor(s) flow from the showerhead assembly in a downward direction toward the substrate and then radially outward over the substrate
Implementation Method 2
tapered sections to facilitate uniform gas flow and minimize plenum size
Implementation Method 3
vapor-phase reactors, such as chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD)
Data Source
AI summary
The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs.