ALD Sidewall Coating for TSV Bond Interface Protection
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Solution Overview
Problem
During the wet-etching TSV process in semiconductor manufacturing, etchants can damage the bonding portions between stacked substrates, leading to low product yield and quality due to erosion and break-off of the bonding interface.
Innovation Solution
An atomic-layer-deposition (ALD) equipment is designed to form a protective layer on the lateral surface and bonding portions of substrate assemblies using a reaction chamber, carrier, coverage mechanism, and dispensing unit, preventing etchant contact and erosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If wafer-bonding process is used to combine stacked substrates, then substrate integration is achieved, but bonding portions become vulnerable to etchant erosion during TSV process
Solution Approach 1:
A protective layer is formed on the lateral surfaces of the stacked substrates before the TSV etching process. This preliminary protective coating prevents etchant from reaching and eroding the bonding portions between substrates, thereby maintaining bonding integrity while allowing the integrated substrate structure to proceed with subsequent processing steps.
2Ease of manufacture
If etching process is performed on substrate assembly, then TSV holes are formed, but bonding portions between substrates are eroded and damaged
Solution Approach 1:
The protective layer is selectively applied to cover only the lateral surfaces where bonding portions are located, while leaving the top and bottom surfaces of the substrates exposed. This localized protection allows etching to proceed normally on the exposed surfaces for TSV hole formation, while the bonding interfaces remain protected from etchant erosion.
3Device complexity
If conventional substrate assembly is used without protective coating, then manufacturing process is simple, but product yield decreases due to bonding portion damage
Solution Approach 1:
The protective layer formation is integrated as a preliminary step in the manufacturing sequence, performed before TSV etching. This adds a relatively simple coating step that prevents bonding portion damage, thereby improving product yield without significantly complicating the overall manufacturing process flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ALD equipment effectively forms a protective layer on the substrate assembly's lateral surface and bonding portions, enhancing the integrity of the substrate assembly and improving semiconductor product yield and quality by preventing etchant-induced damage.
Implementation Method 1
an atomic-layer-deposition (ALD) process to the lateral surface of the substrate assembly, to form a protective layer on the lateral surface of the substrate assembly
Data Source
AI summary
An atomic-layer-deposition equipment, includes a reaction chamber, a carrier, a coverage mechanism and a dispensing unit. The carrier and the dispensing unit are disposed within a containing space of the reaction chamber. The coverage mechanism includes a connecting shaft and a cover plate, wherein the cover plate is disposed within the containing space and faces the carrier, the connecting shaft is connected to the cover plate and extends through the reaction chamber. The carrier is configured to carry a substrate assembly and move the substrate assembly with respect to the coverage mechanism, so as to allow the cover plate contacting a top surface of the substrate assembly. When the cover plate contacts the top surface of the substrate assembly, the dispensing unit surrounds the substrate assembly and dispenses a precursor to a lateral surface of the substrate assembly, so as to form a protective layer thereon.