Atomic Layer Deposition Seed for Epitaxial Silicon Growth
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Solution Overview
Problem
The existing semiconductor manufacturing methods using selective epitaxial growth (SEG) are time-consuming due to low growth rates and inaccuracies in seed window formation, leading to reduced integration and increased manufacturing time, especially when growing silicon epitaxial films on multiple material interfaces, which affects the reliability and yield of semiconductor devices.
Innovation Solution
The method employs atomic layer deposition (ALD) to form a silicon atomic layer film on a semiconductor substrate, followed by annealing processes to single-crystallize the film, which serves as a seed for growing epitaxial silicon films, allowing for faster and more accurate formation of channel silicon patterns and transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If selective epitaxial growth (SEG) is used to grow silicon epitaxial films, then single crystal film growth is achieved, but the growth rate is low and manufacturing time is excessive
Solution Approach 1:
The patent changes the growth parameters by using chemical vapor deposition (CVD) instead of selective epitaxial growth, operating at different temperature and pressure conditions to achieve both high growth rate and single crystal quality. The CVD process allows for controlled deposition at temperatures that optimize both speed and crystal structure formation.
Solution Approach 2:
The patent replaces the SEG mechanical/chemical process with a CVD process that uses vapor-phase deposition. This substitution enables faster film formation while maintaining single crystal quality through controlled vapor deposition and annealing processes.
2Reliability
If SEG process is used, then epitaxial film growth is achieved, but seed window formation accuracy is poor
Solution Approach 1:
The patent performs preliminary actions by first forming a thin film uniformly across the substrate, then selectively removing portions to create seed windows. This preliminary film formation ensures uniform thickness and material properties before the selective growth phase, improving accuracy.
Solution Approach 2:
The patent segments the process into distinct stages: uniform thin film deposition, selective removal to form seed windows, and controlled epitaxial growth. This segmentation allows each step to be optimized independently, improving overall precision.
3Adaptability or versatility
If multiple material interfaces are used for epitaxial growth, then device integration is increased, but manufacturing time and complexity increase
Solution Approach 1:
The patent uses a universal CVD process that can handle multiple material interfaces and substrate types. The same deposition and annealing procedures work across different material combinations, reducing process complexity while maintaining high integration capability.
Solution Approach 2:
The patent adjusts deposition and annealing parameters to accommodate multiple material interfaces. By optimizing temperature, pressure, and gas flow parameters, the process handles complex multi-material structures without proportionally increasing manufacturing time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces manufacturing time, improves growth rates, and enhances the reliability and yield of semiconductor devices by using ALD to control film thickness and deposition uniformly, eliminating the need for the slower SEG process.
Implementation Method 1
depositing a silicon atomic layer film on a semiconductor substrate by using atomic layer deposition
Implementation Method 2
performing a first annealing process which single-crystallizes the silicon atomic layer film
Implementation Method 3
forming an epitaxial silicon film on the silicon atomic layer film by using the silicon atomic layer film as a seed
Data Source
AI summary
A method of manufacturing a semiconductor device by using atomic layer deposition includes depositing a silicon atomic layer film on a semiconductor substrate. The method may also include forming an epitaxial silicon film on the silicon atomic layer film by using the silicon atomic layer film as a seed layer.