Atomic Layer Deposition Sub-Resolution Nanostructures
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Solution Overview
Problem
Existing atomic layer deposition methods have limited in-plane resolution, typically ranging from 50 to 400 micrometers, which restricts the precision of nanostructure fabrication in the X-Y plane.
Innovation Solution
The method involves using two precursor fluids to draw lines on a substrate, where the lines partly overlap or are laterally spaced apart by a predetermined amount smaller than their linewidths, allowing for the formation of high-resolution protrusions or recesses with widths smaller than the individual line widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single precursor fluid is used for deposition, then the process is simple, but the in-plane resolution is limited to 50-400 micrometers
Solution Approach 1:
The patent divides the deposition process into multiple sequential steps using different precursor fluids (first precursor for first line, second precursor for second line). Each precursor targets specific areas, allowing the formation of overlapping lines with widths smaller than individual line widths through precise lateral positioning and overlap control.
Solution Approach 2:
Different precursor fluids are selectively applied to different lateral regions of the substrate. The first precursor deposits material in a first lateral region while the second precursor deposits material in a second lateral region, with controlled overlap. This local differentiation enables sub-diffraction-limited resolution by combining locally deposited patterns.
2Manufacturing precision
If lines are deposited with large spacing, then deposition is easier, but the resulting structures have larger dimensions
Solution Approach 1:
The patent transitions from controlling only lateral spacing to utilizing both lateral positioning and longitudinal overlap. By depositing lines that extend in the longitudinal direction and controlling their lateral overlap, the method creates features with dimensions determined by the overlap region rather than the full line width, achieving finer feature sizes.
Solution Approach 2:
The patent employs dynamic control of the deposition process by sequentially applying different precursors and controlling the relative lateral positioning of deposited lines. The overlap amount can be adjusted during the process to dynamically control the final feature dimensions, allowing adaptive optimization of feature size.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of nanostructures with dimensions in the X-Y plane that are substantially smaller than the individual line widths, achieving improved spatial resolution and allowing for the creation of complex nanostructures such as free-standing protrusions and indentations.
Implementation Method 1
Atomic layer deposition, ALD, is a known technique for manufacturing nanoscale structures by depositing a thin film of a process material onto a substrate. ALD generally involves sequentially exposing a surface material, e.g. the substrate, to precursors and having the precursors react with the surface material.
Implementation Method 2
Atomic layer deposition, ALD, is a known technique for manufacturing nanoscale structures by depositing a thin film of a process material onto a substrate. ALD generally involves sequentially exposing a surface material, e.g. the substrate, to precursors and having the precursors react with the surface material.
Data Source
AI summary
The disclosure relates an atomic layer deposition and/or etching method comprising drawing, using a first precursor fluid, on a substrate a first line extending longitudinally and having, in lateral direction, a first linewidth, and drawing, using a second precursor fluid, on the substrate a second line extending longitudinally and having, in lateral direction, a second linewidth. The first and second lines partly overlap one another laterally by less than the first linewidth and the second linewidth, and/or the first and second lines are laterally spaced apart from one another by less than the first linewidth and the second linewidth, such that a first protrusion is formed of which a largest width in lateral direction is smaller than the first linewidth and the second linewidth, and/or a first recess is formed of which a largest width, in lateral direction, is smaller than the first linewidth and the second linewidth.