Surface Protection Material for Uniform ALD Step Coverage
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Solution Overview
Problem
Conventional atomic layer deposition (ALD) processes in high aspect ratio trench structures result in poor and non-uniform step coverage due to uneven adsorption of metal precursors, leading to thicker films at the upper parts and thinner films at the lower parts of the trench, and are limited by a narrow temperature range.
Innovation Solution
The use of a surface protection material, such as those represented by Chemical Formulas 1-4, which is adsorbed at higher densities at the entrance of the trench than at the bottom, impeding metal precursor adsorption and allowing uniform thin film formation, and extending the ALD process temperature range by reacting with the metal precursor and being oxidized by reaction materials like water vapor, oxygen, or ozone.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional ALD process is used without surface protection material, then the process is simple, but the step coverage is poor and non-uniform
Solution Approach 1:
The surface protection material is supplied before the metal precursor to modify the substrate surface in advance. This preliminary action creates a controlled adsorption environment that prevents excessive metal precursor adsorption at the trench entrance, ensuring uniform film deposition throughout the high aspect ratio trench structure.
Solution Approach 2:
The surface protection material acts as an intermediary between the substrate and the metal precursor. It temporarily occupies surface sites, particularly at the trench entrance, to regulate the adsorption of metal precursor and enable uniform thin film formation in high aspect ratio structures.
2Adaptability or versatility
If conventional ALD process is used without surface protection material, then the process temperature range is limited, but the process is easier to control
Solution Approach 1:
The surface protection material enables the ALD process to operate at higher temperatures by stabilizing the adsorption process. The protection material's thermal stability allows extension of the process temperature range while maintaining controlled and uniform film deposition, resolving the trade-off between temperature adaptability and process control.
3Manufacturing precision
If surface protection material is used, then step coverage is improved, but the process time increases
Solution Approach 1:
The ALD process uses periodic sequential supply of surface protection material, metal precursor, and reaction material. This periodic action allows each step to complete its function efficiently - the protection material is supplied, reacts, is purged, then metal precursor is supplied - ensuring uniform deposition without excessive process time extension.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the step coverage of thin films and expands the temperature range in which the ALD process is effective, ensuring uniform film thickness and stability even at higher temperatures.
Implementation Method 1
supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate
Implementation Method 2
supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate
Implementation Method 3
supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film
Implementation Method 4
discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber
Data Source
AI summary
Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.