AlGaInN Laser Diode Strip Dimensions for High Output
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Solution Overview
Problem
AlGaInN compound semiconductor-based laser diodes struggle to achieve high output in the blue wavelength region due to deteriorated characteristics when traditional design guidelines for AlGaAs or AlGaInP materials are applied, leading to inefficient manufacturing and alignment issues.
Innovation Solution
A laser diode device with a strip-shaped light emitting region made of AlGaInN compound semiconductor, where the width is set between 5 μm to 30 μm and length between 300 μm to 800 μm, optimizing output to achieve high light efficiency and output levels up to 1 W per device, with potential for over 10 W when arrayed and 100 W when stacked.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If traditional design guidelines for AlGaAs or AlGaInP materials are applied to AlGaInN compound semiconductor, then resonator length and light emitting region width are increased, but laser characteristics are significantly deteriorated
Solution Approach 1:
The patent applies parameter changes by establishing specific dimensional ranges for the light emitting region (width: 5-30 μm, length: 300-800 μm) that differ from traditional laser design guidelines. These optimized parameters resolve the contradiction by achieving high output (200 mW or more) while maintaining good characteristics, as the specific width and length ranges balance light extraction efficiency with characteristic stability.
2Power
If width of light emitting region is widened and resonator length is lengthened to obtain higher output, then laser output increases, but manufacturing complexity and alignment precision requirements increase
Solution Approach 1:
The patent resolves manufacturing complexity by optimizing the light emitting region dimensions to 5-30 μm width and 300-800 μm length. These parameters enable high output (200 mW or more) while avoiding the need for arraying multiple lasers, thereby simplifying manufacturing steps and reducing alignment precision requirements compared to traditional approaches.
3Power
If width of light emitting region is widened and resonator length is lengthened to obtain higher output, then laser output increases, but process yield decreases
Solution Approach 1:
The patent improves process yield by establishing optimized dimensional parameters for the light emitting region (width: 5-30 μm, length: 300-800 μm). These parameters enable high output (200 mW or more) while avoiding the yield losses associated with traditional approaches requiring arrayed lasers and precise alignment, thereby improving overall manufacturing productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The optimized dimensions of the light emitting region enable high output and efficiency, improving reliability and reducing manufacturing costs by allowing for higher power output with lower driving current, while maintaining stability and efficiency.
Implementation Method 1
a laser diode device including a semiconductor layer which has an active layer and is made of a nitride Group III-V compound semiconductor... output of laser light from the active layer is 200 mW or more
Data Source
AI summary
A laser diode device capable of obtaining high light efficiency and improving output by using an AlGaInN compound semiconductor as a material is provided. The laser diode device includes semiconductor layer which has an active layer and is made of a nitride Group III-V compound semiconductor containing at least one of aluminum (Al), gallium (Ga), and indium (In) among Group 3B elements and nitrogen (N) among Group 5B elements. The active layer has a strip-shaped light emitting region whose width W is from 5 μm to 30 μm, length L is from 300 μm to 800 μm, and output of laser light from the active layer is 200 mW or more.