AlGaN Semiconductor Structure for Breakdown and Threshold Stability
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Solution Overview
Problem
Semiconductor devices face challenges in achieving stable characteristics, particularly in maintaining high breakdown voltage and suppressing threshold voltage changes over time, due to issues with trap formation and carrier density distribution.
Innovation Solution
The semiconductor device incorporates a specific structure with Alx1Ga1−x1N and Alx2Ga1−x2N semiconductor regions, Alz1Ga1−z1N nitride regions, and insulating members with oxygen and Si/Al, where the second nitride portion and insulating region placement optimize carrier density and electric field distribution, reducing trap-related issues and enhancing breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electrode and insulating layer configurations are used, then device structure is simple, but breakdown voltage is insufficient and threshold voltage stability deteriorates
Solution Approach 1:
The gate electrode is divided into multiple segments (first gate electrode, second gate electrode, third gate electrode) with different potentials applied to each. The insulating layers are also segmented into multiple distinct layers (first insulating layer, second insulating layer, third insulating layer) with different dielectric constants. This segmentation allows independent optimization of each segment's function to achieve high breakdown voltage while maintaining manageable structural complexity.
Solution Approach 2:
Different regions of the device are assigned different material properties and structural characteristics. The first insulating layer has higher dielectric constant than the second insulating layer, creating local quality variations. The nitride region is positioned specifically between certain electrodes to provide localized electric field control. This local quality differentiation optimizes the electric field distribution for high breakdown voltage.
2Stability of the object's composition
If conventional insulating layer configuration is used, then manufacturing process is simple, but threshold voltage changes over time
Solution Approach 1:
The insulating structure is segmented into multiple layers with different dielectric constants. The first insulating layer (higher dielectric constant) and second insulating layer (lower dielectric constant) are positioned at different locations to provide differentiated functions. This segmentation enables better control of electric field distribution and suppresses threshold voltage drift over time.
Solution Approach 2:
The insulating structure uses composite material arrangement with at least two different insulating layers having different dielectric constants. This composite structure creates optimized electric field distribution that suppresses threshold voltage changes over time while managing the complexity through systematic material selection.
3Reliability
If uniform insulating layer is used, then device structure is simple, but electric field distribution is uneven leading to reduced breakdown voltage
Solution Approach 1:
Different insulating layers are assigned different dielectric constants based on their local requirements. The first insulating layer with higher dielectric constant is positioned where stronger electric field control is needed, while the second insulating layer with lower dielectric constant is positioned elsewhere. This local quality differentiation creates uniform electric field distribution throughout the device, achieving high breakdown voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables stable characteristics by achieving high breakdown voltage and suppressing threshold voltage changes, with crystalline nitride portions enhancing carrier density and amorphous insulating regions reducing leak current, resulting in improved on-resistance and threshold stability.
Implementation Method 1
crystalline nitride portions enhancing carrier density
Implementation Method 2
amorphous insulating regions reducing leak current
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, a first insulating member, and a second insulating member. The third electrode includes a first electrode portion and a second electrode portion. The first semiconductor region includes Alx1Ga1−x1N (0≤x1<1). The second semiconductor region includes Alx2Ga1−x2N (0<x2<1, x1<x2). The first nitride region includes Alz1Ga1−z1N (0<z1≤1, x2<z1). The second insulating member includes a first insulating region. A part of the first insulating region is located between the fifth partial region of the first semiconductor region and the second electrode portion of the third electrode in the second direction.